Fitipower Integrated Technology, Inc.

Chih-Nan Cheng

Shang-Cheng Yu

Ching-Jung Kuo

An electrostatic discharge (ESD) protection device includes two N-metal oxide semiconductor (NMOS) elements and a doped region. The two NMOS elements are arranged on a P-substrate, and each NMOS element includes a gate, a source, and a drain. The source and the drain are arranged on two opposite sides of the gate. The doped region is implanted into an outer space of the two NMOS surrounding the two NMOS, and a PN junction is formed by the doped region and the P-substrate.

Electrostatic discharge protection device and manufacturing method thereof

A switching power voltage regulator includes a pulse width modulation (PWM) signal generator, an output circuit and a feedback circuit. The PWM signal generator is configured to generate a PWM signal. The feedback circuit is configured to provide a feedback signal to the output circuit according to an output voltage of the output circuit. The output circuit includes an inductor, a plurality of inverters, and a driver. Each of the inverters includes a first transistor and a second transistor. When the inductor needs to be charged, the driver selectively switches one or more corresponding first transistors on according to the feedback signal.

Switching power voltage regulator for regulating electric energy to load

A semiconductor device includes a center semiconductor chip with a plurality of die pads, a plurality of lead frames, and a plurality of connecting components. The lead frame encapsulates the center semiconductor chip. Each connecting components establishes an electrical connection between the center semiconductor chip and the lead frame. At least one of the center semiconductor chip, the lead frame, and the connecting component forms an indicator.

Semiconductor device

An electrostatic discharge (ESD) protection device is formed in an integrated circuit (IC) with a DC-DC converter. The DC-DC converter includes a high-side switch and a low-side switch in series. The ESD protection device includes a first ESD protection component coupled to the high-side switch in parallel and a second ESD protection component coupled to the low-side switch in parallel. When an ESD occurs, the first ESD protection component is turned on before the high-side switch functions and the second ESD protection component is turned on before the low-side switch functions.

Electrostatic discharge protection device and integrated circuit using same

A triode includes a semiconductor, a deep n-well, a p-well, an n+ doping region, and a p+ doping region. The deep n-well is disposed adjacent to the semiconductor substrate. The p-well is included in the deep n-well and serves as a collector region of the triode. The n+ doping region serves as a base region of the triode. The p+ doping region serves as an emitter region of the triode. The deep n-well is coupled to the n+ doping region.

Triode

A triode includes a semiconductor, a deep n-well, a p-well, an n+ doping region, and a doping region. The deep n-well is disposed adjacent to the semiconductor substrate. The p-well is included in the deep n-well and serves as a collector region of the triode. The n+ doping region serves as a base region of the triode. The p+ doping region serves as an emitter region of the triode. The deep n-well is coupled to the n+ doping region via at least one conducting channel.

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Hsinchu, Taiwan

Chih-Nan Cheng