Eon Silicon Solution Inc.

Eon Silicon Solutions, Inc.

Chih-Ming Kuo

Hsiao-Hua Lu

Yu-Chun Wang

A memory erasing method and a driving circuit thereof are introduced, when cells are selected to be erased, the method includes setting gates of cells which are not selected to be erased and are located at a selected block, drains of all the cells in a selected bank, and the gate of the unselected cells to be floating; supplying a positive voltage to all the sources in a selected bank and their shared P well and N well; and supplying a negative voltage to the gates of the cells located in a selected block and selected to be erased. Accordingly, a positive coupling voltage from P wells is received whenever gates are floating, so as to inhibit erasure of unselected blocks and thereby streamline decoding, thus making it easy to attain further expansion of blocks or banks with a small layout area and partition of sectors in the blocks.

Memory erasing method and driving circuit thereof

A power reset circuit with zero standby current consumption includes a power storage unit, first, second, and third voltage detection units, a switching unit, and a power reset unit. The power storage unit stores electric power by a supply voltage source. The first, second, and third voltage detection units are connected to the supply voltage source to start a switching circuit of the first, second, and third voltage detection units in accordance with a change in a normal supply stage, a shutdown stage, and a voltage ramp-up stage of the supply voltage source, control a voltage level of the power reset unit, and thereby generate the power reset signal. Accordingly, the power reset circuit does not consume current in a standby state (the normal supply stage of the supply voltage source) and thus is characterized by zero current consumption.

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Chu-Pei, Taiwan

Chih-Ming Kuo