Taiwan Semiconductor Manufacturing Comp. Ltd.

Wistron Corporation

Quanta Computer Incorporated

Inpaq Technology Co., Ltd.

Delta Electronics, Inc.

Asia Vital Components Co., Ltd.

Powerchip Semiconductor Corporation

Worldwide Semiconductor Manufacturing Corporation

Winbond Electronics Corporation

Hon Hai Precision Industry Co., Ltd.

Other

3M Innovative Properties Company

Dell Products Inc.

Aten International Co., Ltd.

Windbond Electronics Corp.

Chih-Ming Chen

Chung-Yi Yu

Chao-Jung Chen

Szu-Yu Wang

Chia-Shiung Tsai

Maw-Zan Jau

Sheng-Yung Liu

Cheng-Ming Lin

Hao-Ming Chang

Cheng-Yuan Tsai

Ta-Chih Chen

Xiaomeng Chen

Tsu-Hui Su

Chiao-Chun Hsu

Wu-Che Wen

Wei-Cheng Tseng

Der-Tsyr Fan

Yeur-Luen Tu

Ming Chyi Liu

Lan-Lin Chao

Po-Chun Liu

Lee-Chuan Tseng

Chun-Han Tsao

Tzu-Hung Wang

Han-Yu Chen

Wei-Yi Chu

Yen-Chuan Chen

Chern-Yow Hsu

Yuan-Chih Hsieh

Chih-Wei Hung

Kai-Wen Cheng

Chen-Hao Chiang

Wen-Ying Wen

Chi-Fu Chen

Cheng-Te Lee

Lung Yuan Pan

Chung-Yang Huang

Kang-Neng Hsu

Chia-Ming Liu

Kuan-Shien Lee

Yaw-Tzorng Tsorng

Ping-Yin Liu

Pei-Cheng Hsu

Chia-Hao Hsu

Ru-Liang Lee

Tsung-Yu Chen

Chia-Chen Chen

Cheng-Yuan Hsu

Hou-Hsien Chang

Yi-Lin Chen

Da Sung

Chih-Hsiang Lee

Eugene I-Chun Chen

Ming-Cheng Lee

Chia-Ching Huang

Hsiao-Wen Tin

Rei-Lin Chu

Ming-Tao Ho

Cheng-Chieh Yang

Wen-Ting Chu

Kuo-Chi Tu

Hui-Lin Wang

Yu-Wen Liao

Ling-Sung Wang

Kuo-Ming Wu

Chih-Yang Chang

Hsia-Wei Chen

Chin-Chieh Yang

Yu-Nien Huang

Srikanth Kondapi

Sheng-Hung Shih

Min-hwa Chi

Chwen Yu

Ya-Chen Kao

Wen-Chun You

Chun-Jung Lin

Ko-Hsing Chang

Yi-Chieh Chen

Hung-Che Liao

Pei-Chun Chang

Zhi-Liang Zhang

Shao-Chi Wei

Tsung-Ta Li

Kuo-Chun Hsieh

Yu-Ching Chang

Mei-Yen Li

Sheng-Chang Hsu

Chih-Yeh Lin

Chien-Pang Chen

Chun-Ching Chen

Yen-Wen Huang

Charng-Shyang Jong

Ming-Sen Hsu

Liang Szuma

You-Lin Shih

Chien-Hsun Wu

Shih Ming Chuang

Hsien-Wei Chin

Chih-Yen Lin

Fang-Wen Kuo

The present disclosure, in some embodiments, relates to a device. The device includes a first electrode on a substrate, a piezoelectric layer on the first electrode, and a second electrode on the piezoelectric layer. A layer of hydrogen getter material is disposed on the first electrode and is separated from the piezoelectric layer by the first electrode. The layer of hydrogen getter material laterally extends past opposing outermost sidewalls of the first electrode, as viewed in a cross-sectional view.

Piezoelectric device with hydrogen getter

The embodiments of the disclosure provide a method for selecting a task network, a system and a method for determining actions based on sensing data. The method of the embodiments of the disclosure includes: mapping the sensing data into an input feature vector; feeding the input feature vector into a specific task network to generate an output feature vector via the specific task network, in which the specific task network is trained based on a plurality of first individuals and a plurality of second individuals, the first individuals belong to a first population, the second individuals belong to a second population, and the first individuals and the second individuals are evolved via a coevolution process; and determining an output action according to the output feature vector, and setting a second specific individual based on the output action, in which the second specific individual belongs to the second population.

Method for selecting task network, system and method for determining actions based on sensing data

In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.

Method of manufacturing phase shift photo masks

A power control method, for a first communication device, includes applying Bayesian Optimization, Causal Bayesian Optimization, or Dynamic Causal Bayesian Optimization to at least one data so as to determine a transmission power control value, and outputting the transmission power control value. The at least one data is extracted from at least one signal at least from a second communication device. The transmission power control value is configured to instruct the second communication device how to set the transmission power of the second communication device. Even if the second communication device moves fast, the second communication device is able to adjust its transmission power according to the optimized transmission power control value, thereby minimizing the power consumption of the second communication device.

Power control method and communication device thereof

In some embodiments, a semiconductor fabrication tool is provided. The semiconductor fabrication tool includes a first heating plate arranged within a processing chamber and a second heating plate arranged within the processing chamber vertically over the first heating plate. A first exhaust port is arranged within the processing chamber and a second exhaust port arranged within the processing chamber vertically over the first exhaust port. The first exhaust port is in communication with the first heating plate and is coupled to a first exhaust output. The second exhaust port is in communication with the second heating plate and is coupled to a second exhaust output. A first control element is configured to control a first exhaust pressure at the first exhaust port and a second control element is configured to control a second exhaust pressure at the second exhaust port.

Semiconductor tool having controllable ambient environment processing zones

Provided is a detachable hinge, including a frame and two temples. Each side of the frame is provided with a pivot base having a window. A pivot joint is provided between a top surface and a bottom surface of the window. A front end of each temple is provided with a combination bracket. The combination bracket is provided with a pivot hole having an aperture from top to bottom. The aperture has a width that is smaller than an outer diameter of the pivot joint. Each temple is detachably forced into the pivot joint from the inside of the frame by the aperture such that the pivot joint is embedded in the pivot hole and can pivot relative to the frame. This allows the operator to disassemble and assemble the frame or temples without the assistance of tools, thereby improving the convenience of structural disassembly and assembly.

Detachable hinge

An uplink route decision method for a mobile communication system, wherein the mobile communication system determines an uplink path of a user equipment (UE) in the mobile communication system, includes obtaining an attribute of a user plane function (UPF) required by the UE, and determining whether the UPF is located in a local or a remote place according to an artificial intelligence model.

Uplink route decision method, distributed unit device and user plane function connecting method in mobile communication system

A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.

Piezoelectric device and method of forming the same

A liquid cooling rack assembly for a computing system includes a first cabinet rack configured to receive within a plurality of computing devices with heat-generating electronic components; and a second cabinet rack configured to receive coolant components. The second cabinet rack has a plurality of movable trays, each tray of the plurality of movable trays being movable generally horizontally and independently of other trays of the plurality of movable trays. The liquid cooling rack assembly further includes a plurality of cooling pumps. Each pump of the plurality of cooling pumps is placed on a respective one of the plurality of movable trays, and each pump is independently serviceable from other pumps of the plurality of cooling pumps based on independent movement of a respective tray.

Liquid cooling rack assembly for computing system and telecommunication system including the same

A communication method, for a receiver, including receiving a received signal, and obtaining information of an original signal according to the received signal. A transmitter obtains a transmitted signal according to the original signal. The transmitter sends the transmitted signal. The transmitted signal is changed to the received signal after passing through a channel. The transmitted signal and the received signal are correlated using a structural causal model. A number of a plurality of causal variables of a causal graph of the structural causal model and a causal structure of a causal graph of the structural causal model are determined together.

Communication method and communication device thereof

In some embodiments, the present disclosure relates to a microelectromechanical system (MEMS) comb actuator including a comb structure. The comb structure includes a support layer having a first material and a plurality of protrusions extending away from a first surface of the support layer in a first direction. The plurality of protrusions are also made of the first material. The plurality of protrusions are separated along a second direction parallel to the first surface of the support layer. The MEMS comb actuator may further include a dielectric liner structure that continuously and completely covers the first surface of the support layer and outer surfaces of the plurality of protrusions. The dielectric liner structure includes a connective portion that continuously connects topmost surfaces of at least two of the plurality of protrusions.

Self-aligned dielectric liner structure for protection in MEMS comb actuator

In accordance with some embodiments, a method for processing semiconductor wafer is provided. The method includes introducing a first processing gas of an atomic layer deposition (ALD) process on the semiconductor substrate in a chamber; introducing a second processing gas of the ALD process on the semiconductor substrate in the chamber; creating an exhaust flow from the chamber; monitoring a concentration of the first processing gas of the ALD process in the exhaust flow; in response to the monitored concentration of the first processing gas of the ALD process in the exhaust flow, introducing a cleaning gas into the chamber.

Method of optimizing film deposition process in semiconductor fabrication by using gas sensor

Various embodiments of the present disclosure are directed towards an optoelectronic device. The device includes a substrate, and a germanium photodiode region extending into an upper surface of the substrate. The germanium photodiode region has a curved upper surface that extends past the upper surface of the substrate. A silicon cap overlies the curved upper surface of the germanium photodiode region. There is an absence of oxide between the curved upper surface of the germanium photodiode region and an upper surface of the silicon cap.

In-situ cap for germanium photodetector

In some embodiments, the present disclosure relates to a semiconductor device, including a substrate including a first semiconductor material and a semiconductor layer extending into an upper surface of the substrate and including a second semiconductor material with a different band gap than the first semiconductor material. The semiconductor device also includes a passive cap including a first dielectric material and disposed along the upper surface of the substrate and on opposite sides of the semiconductor layer, and a photodetector in the semiconductor layer. The first dielectric material includes silicon nitride.

Passive cap for germanium-containing layer

A variable configuration method and a variable configuration device thereof are disclosed. The variable configuration method for the variable configuration device includes receiving an incident prediction notification from a network at a first time instant, determining at least one variable at a second time instant in response to the incident prediction notification, and outputting the at least one variable at a third time instant. The incident prediction notification is used to instruct the variable configuration device to determine the at least one variable to respond to a quality of service (QoS) violation prediction at a fourth time instant later than the third time instant.

Variable configuration method and variable configuration device thereof

Growing community of inventors

Taipei, Taiwan

Chih-Ming Chen