Industrial Technology Research Institute

Hannstar Display Corporation

Chih-Lung Lin

Chih-Yu Peng

Chin-Mao Lin

Chian-Chih Hsiao

Ta-Ko Chuang

Wei-Chuan Lin

Chun-Hung Chu

Pei-Shin Jiang

Teng-Yu Wang

Chien-An Chen

Chun-Chieh Huang

Jenn-Yeh Fann

Ting-Hsuan Chen

Hung-Chi Chien

Chih-Chung Wu

Chao-Hung Kao

Mu-Hsi Sung

Hsuan-Fu Wang

Tseng-Huang Liu

Yu-Yu Lin

Yu Hao Huang

Ruey-Shyan Hong

Ping-Jung Wu

Su-Jan Lee

Shih-Hong Chang

Bing Joe Hwang

Tzu-Hui Wu

Yu-Yin Tsai

Yi-Chau Huang

Wen-Ching Lee

Chiou Yen Chiou

Huai-Lo Lee

Hsiao-Jou Chang

Neng-Wen Hsieh

Chin-Yueh Li

Cheng Chuan Wang

A recycle apparatus includes a conveyor, a flattening device, and a cutting tool. The conveyor includes a first roller and a second roller opposite to each other. The flattening device is located aside the first roller and the second roller. The cutting tool is located aside the flattening device. The flattening device is located between the first roller and the second roller of the conveyor and the cutting tool. The first roller and the second roller is configured to press and feed the photovoltaic module to the flattening device for allowing the photovoltaic module to be flattened by the flattening device, and then the flattened photovoltaic module is fed to the cutting tool by the first roller and the second roller for allowing the back sheet to be separated from the glass sheet assembly by the cutting tool.

Recycle apparatus for photovoltaic module

Methods of amplifying and determining a target nucleotide sequence are provided. The method of amplifying the target nucleotide sequence includes the following steps. A first adaptor and a second adaptor are linked to two ends of a double-stranded nucleic acid molecule with a target nucleotide sequence respectively to form a nucleic acid template, in which the first adaptor includes a Y-form adaptor or a hairpin adaptor and the second adaptor is a hairpin adaptor. Then, a PCR amplification cycle is performed on the nucleic acid template to obtain a PCR amplicon of the target nucleotide sequence.

Method of amplifying and determining target nucleotide sequence

The disclosed embodiments relate to a dismantling device configured for a frame of a PV module. The dismantling device includes a connection portion, a first holding portion, and a second holding portion. The first holding portion is connected to the connection portion and configured to press against one of an inner wall and outer wall of the frame. The second holding portion is slidably disposed on the connection portion and movably closer to or away from the first holding portion along a sliding direction. The second holding portion is configured to press against the other one of the inner wall and the outer wall so as to clamp the frame with the first holding portion and to distort the frame.

Dismantling device for frame of PV module

A biological sample processing device includes a base, a purification unit, a metering unit and a first tube. The purification unit is disposed on the base and is configured to purify a sample. The metering unit is disposed on the base and has an inlet, at least one metering trough and an overflow trough. The inlet is connected to the purification unit via the first tube, and the metering trough is connected between the inlet and the overflow trough. The sample from the purification unit is configured to enter the metering unit through the inlet to be moved toward the metering trough, and to be moved toward the overflow trough after the metering trough is filled with the sample.

Biological sample processing device

A recombinant protein and a preparation method and application thereof are provided. The recombinant protein includes a peptide, and the peptide includes an amino acid sequence after substitution of the sequence of SEQ ID NO:. The substitution includes at least one selected from the group consisting of the following substitutions: the amino acid at position 182 of SEQ ID NO: 1 is substituted with aspartic acid (Asp); the amino acid at position 268 of SEQ ID NO: 1 is substituted with aspartic acid (Asp); and the amino acid at position 384 of SEQ ID NO: 1 is substituted with tyrosine (Tyr). The recombinant protein is suitable for detecting glycated hemoglobin.

Recombinant protein, and preparation method and application thereof

Isolated DNA polymerase and the mutant DNA polymerases thereof are provided. The DNA polymerases have good thermostability.

Isolated DNA polymerases, kits and applications thereof

A method for fabricating an IBIIIAVIA-group amorphous compound used for thin-film solar cells is provided. A mixture solution including elements of Group IB, IIIA, VIA or combinations thereof is provided. The mixture solution is heated and filtered. IBIIIAVIA-group amorphous powders are acquired after drying the heated and filtered mixture solution.

Fabrication method for ibiiiavia-group amorphous compound and ibiiiavia-group amorphous precursor for thin-film solar cells

A thin film transistor array substrate of a thin film transistor liquid crystal display (TFT-LCD) is provided. The gate dielectric layer of the TFT includes a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when doped and undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled, and thereby the capacitance of the storage capacitor can be controlled.

Thin film transistor array substrate

A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming a silicon island and a bottom electrode on the transparent substrate, the silicon island having an undoped region located on the central portion, and two doped regions respectively located on both sides, ii) forming a first silicon nitride layer on the transparent substrate, and iii) forming a stacked layer comprising a second silicon nitride layer and a conductive layer on the undoped region of the silicon island, and the first conductive layer of the stacked layer serving as a gate of a thin film transistor, wherein an etching selectivity ratio of the conductive layer over the dielectric layer is not less than about 5.0.

Method of controlling a capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor

A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming an undoped amorphous silicon layer on a silicon nitride layer, ii) forming an etching mask on the undoped amorphous silicon layer, and iii) forming two doped amorphous silicon layers on portion of the undoped amorphous silicon layer and the etching mask, the two doped amorphous silicon layers being spaced apart and located on either side of the gate, wherein an etching selectivity ratio of the undpoed and doped amorphous silicon layers over the dielectric layer being not less than about 5.0.

A method of controlling the capacitance of the TFT-LCD storage capacitor is provided. The gate dielectric layer of the TFT is composed of a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when a doped and an undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled; thereby the capacitance of the storage capacitor can be controlled.

Method of controlling storage capacitor's capacitance of thin film transistor liquid crystal display

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Taichung, Taiwan

Chih-Lung Lin