Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Long Chiang

Ming-Hsi Yeh

Ying-Liang Chuang

Ju-Li Huang

Kuo Bin Huang

Pinyen Lin

Li-Te S Lin

Fang-Wei Lee

Fo-Ju Lin

The present disclosure describes a method to form a semiconductor device with air inner spacers. The method includes forming a semiconductor structure on a first side of a substrate. The semiconductor structure includes a fin structure having multiple semiconductor layers on the substrate, an epitaxial structure on the substrate and in contact with the multiple semiconductor layers, a gate structure wrapped around the multiple semiconductor layers, and an inner spacer structure between the gate structure and the epitaxial structure. The method further includes removing a portion of the substrate from a second side of the substrate to expose the epitaxial structure and the inner spacer structure, forming an oxide layer on the epitaxial structure on the second side of the substrate, and removing a portion of the inner spacer structure to form an opening. The second side is opposite to the first side of the substrate.

Air inner spacers

Embodiments of the present disclosure provide wet process based methods for modifying threshold value (Vt) of high-k metal gate using self-assembled monolayer (SAM) on dedicated transistor. In one embodiment, the method includes forming a gate structure over a substrate, the gate structure comprising a gate dielectric layer, a barrier layer formed over the gate dielectric layer, and an oxide layer formed over the barrier layer, and forming a self-assembled monolayer on the oxide layer by exposing the oxide layer to an aqueous solution containing metal oxides in a metal dissolving acid.

High-k metal gate and method for fabricating the same

High-K metal gate and method for fabricating the same

Growing community of inventors

Jhubei, Taiwan

Chih-Long Chiang