Playnitride Display Co., Ltd.

Chih-Ling Wu

Yi-Min Su

Yen-Yeh Chen

Yi-Chun Shih

Tzu-Yang Lin

Yu-Yun Lo

Shiang-Ning Yang

Bo-Wei Wu

Gwo-Jiun Sheu

Sheng-Chieh Liang

Pei-Hsin Chen

Ying-Tsang Liu

Yun-Li Li

Yi-Ching Chen

Sheng-Yuan Sun

Yu-Hung Lai

Yu-Chu Li

Huan-Pu Chang

Yu-Ya Peng

Ying-Ting Lin

Kuo-Wei Chen

A micro device includes an epitaxial structure, an overcoat layer, and a first light-guiding structure. The epitaxial structure has a top surface and a bottom surface opposite to each other and a peripheral surface connecting the top surface and the bottom surface. The insulating layer covers at least the bottom surface and part of the peripheral surface of the epitaxial structure. The overcoat layer includes a contact portion and an extension portion. The contact portion conformally covers the insulating layer and the peripheral surface and the bottom surface of the epitaxial structure, and the extension portion connects the contact portion and extends in a direction away from the peripheral surface. The display apparatus includes a circuit substrate and a plurality of the above-mentioned micro devices. The micro devices are disposed and are correspondingly electrically connected to the first pads and the second pads of circuit substrate.

Micro device and display apparatus

A micro light emitting device display apparatus including a substrate, a plurality of micro light emitting devices, an isolation layer, and at least one first air gap is provided. The substrate has a plurality of connection pads. The micro light emitting devices are discretely disposed on the substrate. The isolation layer is disposed between the substrate and each of the micro light emitting devices. The at least one first air gap is disposed between the substrate and a surface of the isolation layer facing the substrate.

Micro light emitting device display apparatus

A micro light emitting diode panel is provided. The micro light emitting diode panel includes a circuit substrate, a plurality of transistor devices and a plurality of micro light emitting diode devices. The transistor devices are bonded to the circuit substrate. Each of the transistor devices has a semiconductor pattern, a source electrode, a drain electrode and a gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor pattern. The source electrode, the drain electrode, and the gate electrode are located between the semiconductor pattern and the circuit substrate. The electron mobility of the semiconductor pattern is greater than 20 cm/V·s. The micro light emitting diode devices are bonded to the circuit substrate, and are electrically connected to the transistor devices respectively.

Micro light emitting diode panel

An LED micro display device includes a circuit substrate, micro light-emitting elements, an insulating layer, and a common electrode layer. The circuit substrate has conductive patterns. The micro light-emitting elements are bonded to the circuit substrate and disposed corresponding to the conductive patterns. Each micro light-emitting element has a bottom surface, a top surface and a side wall. The bottom surface connects to the corresponding conductive pattern. The side wall has a first sidewall portion adjacent to the circuit substrate and a second sidewall portion connected to the first sidewall portion. The insulating layer is disposed on the circuit substrate, covers first sidewall portions, and exposes second sidewall portions. The common electrode layer covers the insulating layer and second sidewall portions. The common electrode layer is electrically connected to the micro light-emitting elements, contacts the second sidewall portions, and exposes the top surfaces.

Light-emitting diode micro display device

A semiconductor structure includes a substrate, a plurality of micro semiconductor devices and a fixing structure. The micro semiconductor devices are disposed on the substrate. The fixing structure is disposed between the substrate and the micro semiconductor devices. The fixing structure includes a plurality of conductive layers and a plurality of supporting layers. The conductive layers are disposed on the lower surfaces of the micro semiconductor devices. The supporting layers are connected to the conductive layers and the substrate. The material of each of the conductive layers is different from the material of each of the supporting layers.

Micro semiconductor display device

A micro light-emitting diode display includes a first-type semiconductor base layer, a plurality of semiconductor light-emitting mesas dispersedly disposed on the first-type semiconductor base layer, a semiconductor heightening portion disposed on the first-type semiconductor base layer, a first bonding metal layer disposed on the semiconductor heightening portion, and a plurality of second bonding metal layers respectively disposed on the semiconductor light-emitting mesas. A top surface of the semiconductor heightening portion and a plurality of top surfaces of the semiconductor light-emitting mesas facing away from the first-type semiconductor base layer are coplanar. The top surface of the semiconductor heightening portion forms a first bonding surface adjacent to the first bonding metal layer. The top surfaces of the semiconductor light-emitting mesas respectively form a plurality of second bonding surfaces adjacent to the second bonding metal layers, and the first bonding surface and the second bonding surfaces are coplanar.

Micro light-emitting diode display

A micro light-emitting diode display panel includes a substrate, a plurality of pixel structures, and a plurality of wavelength conversion structures. The pixel structures are disposed on the substrate. Each pixel structure includes a plurality of micro light-emitting diodes. The micro light-emitting diodes are formed by a plurality of different portions of a connected epitaxial structure. The wavelength conversion structures are disposed in the epitaxial structure and are respectively aligned with at least a portion of the micro light-emitting diodes.

Micro light-emitting diode display panel

A micro light-emitting diode device includes a substrate, a micro light-emitting diode, a first protection layer and a second protection layer. The micro light-emitting diode is disposed on the substrate. The first protection layer is disposed on a first portion of an outer side wall of the micro light-emitting diode and has a gap from the substrate. The second protection layer is at least disposed on a second portion of the outer side wall and is located in the gap between the first protection layer and the substrate. A height of the second protection layer on the substrate is less than or equal to a height of the micro light-emitting diode on the substrate.

Micro light-emitting diode device

A micro light emitting device display apparatus including a circuit substrate, a plurality of micro light emitting devices, a first common electrode layer, and a second common electrode layer is provided. The micro light emitting devices are disposed on the circuit substrate and individually include an epitaxial structure and a first-type electrode and a second-type electrode respectively disposed on two side surfaces of the epitaxial structure opposite to each other. The first common electrode layer is disposed on the circuit substrate and directly covers the plurality of first-type electrodes of the micro light emitting devices. The second common electrode layer is disposed between the micro light emitting devices. The first common electrode layer is electrically connected to the second common electrode layer.

A micro light-emitting diode device includes a substrate, a micro light-emitting diode, a first protection layer and a second protection layer. The micro light-emitting diode is adapted to be disposed on the substrate. The first protection layer is disposed on a first portion of an outer side wall of the micro light-emitting diode and has a gap from the substrate. The second protection layer is disposed on a second portion of the outer side wall of the micro light-emitting diode. The second protection layer is located in the gap between the first protection layer and the substrate and covers a part of the first protection layer. A maximum thickness of the first protection layer on the outer side wall is less than a maximum thickness of the second protection layer on the outer side wall.

A micro light emitting diode including an epitaxial structure and two electrodes is provided. The epitaxial structure includes a first surface, a second surface and a side surface. The first surface is opposite to the second surface, and the side surface is connected to the first surface and the second surface. The side surface includes a first portion and a second portion. The first portion is connected to the second portion to form a turning position. A width of the epitaxial structure gradually increases from the first surface to the turning position and gradually decreases from the turning position to the second surface. The two electrodes are disposed on the epitaxial structure and are electrically connected to the epitaxial structure. A micro light emitting diode device substrate adopting the micro light emitting diode is also provided.

Micro light emitting diode and micro light emitting diode device substrate

A method of fabricating a micro light emitting diode (LED) panel is provided. The method includes forming a semiconductor material substrate, forming a plurality of transistor devices, transferring and bonding the transistor devices onto a circuit substrate, and transferring a plurality of micro LED devices from a micro LED device substrate to the circuit substrate. The semiconductor material substrate includes a carrier, a release layer, an inorganic insulation layer, and a semiconductor material layer. The release layer is located between the carrier and the inorganic insulation layer. The semiconductor material layer is bonded to the release layer through the inorganic insulation layer. Electron mobility of the semiconductor material layer is greater than 20 cm/V&#xb7;s. The transistor devices are disposed on the release layer and are electrically connected to the circuit substrate. The micro LED devices are electrically connected to the transistor devices. A micro LED panel is also provided.

Semiconductor material substrate, micro light emitting diode panel and method of fabricating the same

A micro light emitting device display apparatus including a substrate, a plurality of micro light emitting devices, an isolation layer, and an air gap is provided. The micro light emitting devices are discretely disposed on the substrate. The isolation layer is disposed between the micro light emitting devices. The air gap is disposed between the micro light emitting devices, the isolation layer, and the substrate.

A micro device includes an epitaxial structure, an insulating layer, and a light-transmissive layer. The epitaxial structure has a top surface and a bottom surface opposite to each other and a peripheral surface connected to the top surface and the bottom surface. The insulating layer covers the peripheral surface and the bottom surface of the epitaxial structure and exposes a portion of the peripheral surface. The light-transmissive layer covers the top surface of the epitaxial structure and is extended over at least a portion of the portion of the peripheral surface.

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Miaoli County, Taiwan

Chih-Ling Wu