Playnitride Inc.

Genesis Photonics Inc.

Pixeled Display Co., Ltd.

Chih-Ling Wu

Yu-Yun Lo

Yi-Min Su

Yi-Ru Huang

Jing-En Huang

Yu-Hung Lai

Tzu-Yang Lin

Shao-Ying Ting

Yun-Li Li

Po-Jen Su

Yu-Chu Li

Yi-Chun Shih

Kuan-Yung Liao

Yi-Ching Chen

YI-Fan Li

Yen-Lin Lai

Pei-Hsin Chen

Ying-Tsang Liu

Ching-Liang Lin

Shao-Hua Huang

Pai-Yang Tsai

Yi-Ju Shih

Huan-Pu Chang

Yen-Yeh Chen

An apparatus with micro devices includes a circuit substrate, at least one micro device, and at least one light guide structure. The micro device is disposed on the circuit substrate. The micro device has a top surface and a bottom surface opposite to each other, a peripheral surface connected with the top surface and the bottom surface, a first-type electrode, and a second-type electrode. The light guide structure is disposed on the circuit substrate and is not in direct contact with the first-type electrode and the second-type electrode. The light guide structure includes at least one connecting portion and at least one holding portion. The connecting portion is disposed on an edge of the top surface of the micro device. An orthographic projection area of the light guide structure on the top surface is smaller than an area of the top surface.

Apparatus with micro device

A micro device includes an epitaxial structure and a light guide structure. The epitaxial structure has a top surface. The light guide structure is disposed on the top surface, and the light guide structure includes a connecting portion and a covering portion. The connecting portion is disposed on an edge of the epitaxial structure and extends along a sidewall of the epitaxial structure. The covering portion is disposed on the top surface and connected to the connecting portion. A width of the connecting portion at the edge of the epitaxial structure is smaller than a width away from the top surface.

Micro device and micro device display apparatus

A method for manufacturing a micro light emitting diode device is provided. A connection layer and a plurality of epitaxial structures are formed on a substrate, wherein the epitaxial structures are separated from each other and relative positions therebetween are fixed via the connection layer. A first pad is formed on each of the epitaxial structures. A plurality of light blocking layers are formed between the epitaxial structures, wherein the light blocking layers and the epitaxial structures are alternately arranged. Each of the epitaxial structures is bonded to a destination substrate after forming the light blocking layers. The substrate is removed to expose the connection layer. A light conversion layer is formed corresponding to each of the epitaxial structures, wherein a width of the light conversion layer is greater than or equal to a distance between any two of the light blocking layers.

Micro light emitting diode device and manufacturing method thereof

A structure with micro light-emitting device includes a substrate, at least one micro light-emitting device, a holding structure, and at least one buffer structure. The micro light-emitting device is disposed on the substrate, and there is a vertical distance between the micro light-emitting device and the substrate. The holding structure is disposed on the substrate and directly contacts the micro light-emitting device. The buffer structure directly contacts the holding structure. Here, a Young's modulus of the buffer structure is smaller than a Young's modulus of the holding structure.

Structure with micro light-emitting device

A carrier structure suitable for transferring or supporting a plurality of micro devices including a carrier and a plurality of transfer units is provided. The transfer units are disposed on the carrier. Each of the transfer units includes a plurality of transfer parts. Each of the transfer parts has a transfer surface. Each of the micro devices has a device surface. The transfer surfaces of the transfer parts of each of the transfer units are connected to the device surface of corresponding micro device. The area of each of the transfer surfaces is smaller than the area of the device surface of the corresponding micro device. A micro device structure using the carrier structure is also provided.

Carrier structure and micro device structure

A light emitting diode display includes a driving substrate, a plurality of micro light-emitting devices, a first common electrode, and a second common electrode. The micro light-emitting devices are arranged on the driving substrate. Each of the micro light-emitting devices includes an epitaxial structure, a first type electrode, and a second type electrode. The first common electrode is disposed on the driving substrate and located between the second type electrodes of the micro light-emitting devices, wherein the first common electrode exposes at least a portion of an upper surface of each of the second type electrodes. The second common electrode is located between the second type electrodes of the micro light-emitting devices and electrically connected to the first common electrode, wherein the second common electrode does not directly contact the micro light-emitting devices.

Light emitting diode display

A structure with micro devices includes a substrate, at least one micro device, and at least one holding structure. The micro device is disposed on the substrate. The micro device has a top surface and a bottom surface opposite to each other, a peripheral surface connected with the top surface and the bottom surface, a first-type electrode, and a second-type electrode. The holding structure is disposed on the substrate and is away from the first-type electrode and the second-type electrode. The holding structure includes at least one connecting portion and at least one holding portion. The connecting portion is disposed on an edge of the top surface of the micro device. The holding portion is connected to the connecting portion and extends onto the substrate.

Structure of micro device with holding structure

A micro light emitting device includes an epitaxial structure and a first type electrode. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first type semiconductor layer has a first accommodating cavity. The first type electrode is disposed on the first accommodating cavity. A maximum width of the first type electrode is greater than or equal to a maximum width of an upper surface of the first type semiconductor layer.

Micro light emitting device and display apparatus

A structure with micro device including a substrate, at least one micro device, and at least one holding structure is provided. The micro device having a top surface is disposed on the substrate, and the top surface is away from the substrate. The holding structure including at least one connecting portion and at least one holding portion is disposed on the substrate. The connecting portion is disposed on at least one edge of the micro device. The holding portion connects the connecting portion and extends to the substrate. From a top view direction, a width of the connecting portion gradually increases from the edge of the micro device to the holding portion.

Structure with micro device

A structure with micro device includes a substrate, a plurality of micro devices, and a plurality of holding structures. The micro devices are disposed on the substrate and arranged in multiple rows. Each of the micro devices has a top surface. The holding structures are respectively disposed on the top surface of each of the micro devices and extend to the substrate. Distances between the holding structure on the micro devices on any one of the rows and the holding structures on the micro devices on two adjacent rows are different.

A display panel and a repairing method thereof. The display panel includes micro LEDs and a circuit substrate. The circuit substrate includes first wires, second wires and connecting circuits. Respective one of the connecting circuits is configured to be electrically connected to respective one of the micro LEDs. Each of the connecting circuits includes a first pad, a second pad, a third pad and a connecting wire. The first pad is configured to be electrically connected to the corresponding micro LED and one of the first wires. The first and second pads are separated by a first gap. The second pad is configured to be electrically connected to one of the second wires. The second and third pads are separated by a second gap. The connecting wire is connected to the second pad and the third pad.

Display panel and repairing method therefor

A structure with micro device including a substrate, at least one micro device and at least one holding structure is provided. The micro device is disposed on the substrate and has a top surface away from the substrate, a bottom surface opposite to the top surface, and a circumferential surface connecting the top surface and the bottom surface. The holding structure is disposed on the substrate. From the cross-sectional view, a thickness of the holding structure is not fixed from the boundary of the top surface and the circumferential surface to the substrate. The micro device is connected to the substrate through the holding structure.

Structure with micro device having holding structure

A display panel includes a substrate, a plurality of first light emitting diodes (LEDs), a plurality of second LEDs, a plurality of first common electrodes, and a plurality of second common electrodes. Each pixel unit of the substrate includes a first sub-pixel region and a second sub-pixel region. The first LEDs are disposed on the substrate and located in the first sub-pixel regions, and the second LEDs are disposed on the substrate and located in the second sub-pixel regions. A dominant wavelength of each of the first LEDs is different from that of each of the second LEDs. The first common electrodes are connected to and form an ohmic contact with the first LEDs. The second common electrodes are connected to and form an ohmic contact with the second LEDs. A material of the first common electrodes is different from that of the second common electrodes.

LED display panel

A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.

Light emitting diode structure

A micro light emitting device includes an epitaxial structure, a first type electrode, and a second type electrode. The epitaxial structure has a first accommodating cavity. The first type electrode is disposed on the first accommodating cavity of the epitaxial structure and has a second accommodating cavity. The second type electrode is disposed on the epitaxial structure, wherein the epitaxial structure is located between the first type electrode and the second type electrode.

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Tainan, Taiwan

Chih-Ling Wu