Tsinghua University

Chih-Kuo Tseng

Ming-Chang Lee

Zhong-Da Tian

A method is provided to integrate all active and passive integrated optical devices on a silicon (Si)-based integrated circuit (IC). A Si-based substrate, instead of a Si-on-insulator (SOI) substrate, is used for integrating the devices. Therefore, cost is down and heat dissipation efficiency is enhanced. Besides, rapid melt growth (RMG) is used for solving problems on integrating the electric circuit and the optical devices. The present invention can be used to develop a proactive optical transceivers on a standard chip; or, to fully and compatibly integrate all devices on a circuit for an optical communication chip.

Method of integrating all active and passive optical devices on silicon-based integrated circuit

The present disclosure provides a carrier channel with an element concentration gradient distribution. The carrier channel includes a substrate and a carrier channel structure. The carrier channel structure is stacked on the substrate, wherein a ratio of a height and a width of the carrier channel is greater than 1, and the carrier channel is crystallized from the contact surface by a rapid melting growth process, thus the carrier channel structure has the element concentration gradient distribution.

Carrier channel with element concentration gradient distribution and fabrication method thereof

The present invention relates to a self-aligned and lateral-assembly method for integrating heterogeneous material structures on the same plane. By using this method, two semiconductor materials heterogeneous to each other can be laterally assembled in a self-alignment way, without using any epitaxial buffer layers or gradient buffer layers. Therefore, when applying this method to fabricating an electronic device having heterojunction, not only the manufacture cost can be effectively reduced, but the difficulty of manufacturing process can also be overcome. Moreover, in this method, one amorphous heterogeneous semiconductor material would laterally grow to a crystal semiconductor material through epitaxy after being treated the rapid melting growth (RMG) process, and the epitaxial crystal semiconductor material would then be laterally assembled with the other one semiconductor material on an identical substrate, for carrying out the lateral assembly of the two heterogeneous semiconductor materials by using the self-alignment way and the smallest thermal budget.

Self-aligned and lateral-assembly method for integrating heterogeneous material structures on the same plane

The present invention relates to a self alignment and assembly fabrication method for stacking multiple material layers, wherein a variety of homogeneous/heterogeneous materials can be stacked on a substrate by this self alignment and assembly fabrication method, without using any epitaxial buffer layers or gradient buffer layers; Moreover, these stacked materials can be single crystal, polycrystalline or non-crystalline phase materials. So that, by applying this self alignment and assembly fabrication method to fabricate a multi-layer device, not only the material cost can be effectively reduced, but the wafer alignment problem existing in the conventional wafer bonding process can also be solved. In addition, in the present invention, rapid melting growth (RMG) is used for growing the multiple crystallized materials laterally and rapidly from the substrate surface by liquid phase epitaxy, therefore the thermal budget can be largely reduced when fabricating the multi-layer device.

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Taichung, Taiwan

Chih-Kuo Tseng