TSMC Solid State Lighting Ltd.

Industrial Technology Research Institute

Epistar Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Kuang Yu

Hung-Yi Kuo

Hsing-Kuo Hsia

Chun-Kai Liu

Chyi Shyuan Chern

Ming-Ji Dai

Fu-Chih Yang

Hsin-Hsien Wu

Ching-Hua Chiu

Hung-Chao Kao

Ken Wen-Chien Fu

Gordon Kuo

Ming-Feng Wu

Shouli Steve Hsia

Ra-Min Tain

Ming-Che Hsieh

Wen-Chien Fu

Chen-Hua Douglas Yu

Cheng-Ta Ko

Shih-Hsien Wu

Ming-Sheng Leu

Shyi-Ching Liau

Wei-Kuo Han

Heng-Chieh Chien

Hung-Wen Huang

Jin-Bao Wu

Jenn-Dong Hwang

Chih-Yuan Cheng

Suh-Yun Feng

Sheng-Liang Li

Jui Lin Chao

Troy Wu

Chyi Shyuan Chem

Tsung-Chieh Cheng

A method includes bonding a photonic engine onto an interposer, and bonding a package component onto the interposer. The package component includes a device die. The method further includes encapsulating the package component and the photonic engine in an encapsulant, attaching a thermal-electronic cooler to the photonic engine, and attaching a metal lid to the package component.

Thermo-electric cooler for dissipating heat of optical engine

A light-emitting device includes a first epi-structure with a top surface and a bottom surface opposite to the top surface, a first metal element and a second metal element disposed on the bottom surface, a first through-via, a conductive element disposed on the top surface, and a phosphor layer disposed on the top surface and covering the conductive element. The first epi-structure includes a first doped semiconductor layer, a second doped semiconductor layer closer to the bottom surface than the first doped semiconductor layer, and a light-emitting layer disposed between the first and second doped semiconductor layers. The first through-via extends through the first doped semiconductor layer and the second doped semiconductor layer and is electrically connected to the first doped semiconductor layer and the second metal element. The conductive element is in a configuration to expose a portion of the top surface, and electrically connected to the first through-via.

Wafer level photonic devices dies structure and method of making the same

Provided is a method of fabricating a light-emitting diode (LED) device. A wafer is provided. The wafer has a sapphire substrate and a semiconductor layer formed on the sapphire substrate. The semiconductor layer contains a plurality of un-separated LED dies. A photo-sensitive layer is formed over the semiconductor layer. A photolithography process is performed to pattern the photo-sensitive layer into a plurality of patterned portions. The patterned portions are separated by a plurality of openings that are each substantially aligned with one of the LED dies. A metal material is formed in each of the openings. The wafer is radiated in a localized manner such that only portions of the wafer that are substantially aligned with the openings are radiated. The sapphire substrate is removed along with un-radiated portions of the semiconductor layer, thereby separating the plurality of LED dies into individual LED dies.

Dicing-free LED fabrication

An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening. A method of fabricating an LED device includes forming a number of openings in a wafer. The method also includes coupling light-emitting diode (LED) devices to conductive carriers. The LED devices with conductive carriers at least partially fill each of the openings.

LED device with improved thermal performance

The present disclosure provides one embodiment of a light-emitting structure. The light-emitting structure includes a carrier substrate having first metal features; a transparent substrate having second metal features; a plurality of light-emitting diodes (LEDs) bonded with the carrier substrate and the transparent substrate, sandwiched between the carrier substrate and the transparent substrate; and metal pillars bonded to the carrier substrate and the transparent substrate, each of the metal pillars being disposed between adjacent two of the plurality of LEDs, wherein the first metal features, the second metal features and the metal pillars are configured to electrically connect the plurality of LEDs.

Doubled substrate multi-junction light emitting diode array structure

A plurality of conductive pads are disposed on a substrate. A plurality of semiconductor dies are each disposed on a respective one of the conductive pads. A mold device is positioned over the substrate. The mold device contains a plurality of recesses that are each configured to accommodate a respective one of the semiconductor dies underneath.

Method and apparatus for accurate die-to-wafer bonding

A structure includes a carrier substrate with a first side and a second side opposite the first side. The carrier substrate has a first contact pad and a second contact pad disposed over the first side and a third contact pad and a fourth contact pad disposed over the second side. The carrier substrate further includes a substrate and an insulation film disposed between the substrate and the first, second, third, and fourth contact pads. The structure further includes a first epi-structure and a second epi-structure disposed over the carrier substrate. The structure further includes a first metal element and a second metal element. Moreover, the structure further includes a first through-via and a second through-via. The first through-via and the second through-via extend through the first and second epi-structures respectively.

Wafer level photonic device die structure and method of making the same

A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.

LED structure

A package structure includes: a substrate having a first side and a second side opposite to the first side; a metal layer disposed over at least a portion of the second side of the substrate; a light-reflective layer disposed over the first side of the substrate; and a photonic device bonded to the light-reflective layer from the first side. A segment of the metal layer extends through the substrate from the first side to the second side, and a portion of the substrate is completely enclosed in a cross-sectional view by the metal layer. The package structure is free of a bonding wire over the second side of the substrate.

Light emitting diode emitter substrate with highly reflective metal bonding

Double substrate multi-junction light emitting diode array structure

Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a substrate having opposite first and second sides. A semiconductor layer is formed on the first side of the substrate. The method includes forming a photoresist layer over the semiconductor layer. The method includes patterning the photoresist layer into a plurality of photoresist components. The photoresist components are separated by openings. The method includes filling the openings with a plurality of thermally conductive components. The method includes separating the semiconductor layer into a plurality of dies using a radiation process that is performed to the substrate from the second side. Each of the first regions of the substrate is aligned with one of the conductive components.

A method of light-emitting diode (LED) packaging includes coupling a number of LED dies to corresponding bonding pads on a sub-mount. A mold apparatus having concave recesses housing LED dies is placed over the sub-mount. The sub-mount, the LED dies, and the mold apparatus are heated in a thermal reflow process to bond the LED dies to the bonding pads. Each recess substantially restricts shifting of the LED die with respect to the bonding pad during the heating.

The present disclosure provides a method of fabricating a light emitting diode (LED) package. The method includes bonding a plurality of separated light emitting diode (LED) dies to a substrate, wherein each of the plurality of separated LED dies includes an n-doped layer, a quantum well active layer, and a p-doped layer; depositing an isolation layer over the plurality of separated LED dies and the substrate; etching the isolation layer to form a plurality of via openings to expose portions of each LED die and portions of the substrate; forming electrical interconnects over the isolation layer and inside the plurality of via openings to electrically connect between one of the doped layers of each LED die and the substrate; and dicing the plurality of separated LED dies and the substrate into a plurality of LED packages.

Micro-interconnects for light-emitting diodes

Growing community of inventors

Chiayi, Taiwan

Chih-Kuang Yu