Taiwan Semiconductor Manufacturing Comp. Ltd.

Pixart Imaging Incorporated

Chih-Kang Han

Hsi-Kuei Cheng

Hsin-Chieh Huang

Ching Fu Chang

Ching-Fu Chang

Yi-Jen Lai

En-Feng Hsu

Huai-Tei Yang

Chien-Pin Chan

Chih-Yuan Chien

Shin-Puu Jeng

Hsien-Wen Liu

Yi-Jou Lin

Tzu-Jui Fang

A method includes forming a first polymer layer to cover a metal pad of a wafer, and patterning the first polymer layer to form a first opening. A first sidewall of the first polymer layer exposed to the first opening has a first tilt angle where the first sidewall is in contact with the metal pad. The method further includes forming a metal pillar in the first opening, sawing the wafer to generate a device die, encapsulating the device die in an encapsulating material, performing a planarization to reveal the metal pillar, forming a second polymer layer over the encapsulating material and the device die, and patterning the second polymer layer to form a second opening. The metal pillar is exposed through the second opening. A second sidewall of the second polymer layer exposed to the second opening has a second tilt angle greater than the first tilt angle.

Info structure with copper pillar having reversed profile

An embodiment is a structure including a first package including a first die, and a molding compound at least laterally encapsulating the first die, a second package bonded to the first package with a first set of conductive connectors, the second package comprising a second die, and an underfill between the first package and the second package and surrounding the first set of conductive connectors, the underfill having a first portion extending up along a sidewall of the second package, the first portion having a first sidewall, the first sidewall having a curved portion and a planar portion.

Package structure and method of forming the same

A semiconductor structure includes a die, a molding surrounding the die, a first dielectric layer disposed over the die and the molding, and a second dielectric layer disposed between the first dielectric layer and the die, and between the first dielectric layer and the molding. A material content ratio in the first dielectric layer is substantially greater than that in the second dielectric layer. In some embodiments, the material content ratio substantially inversely affects a mechanical strength of the first dielectric layer and the second dielectric layer.

Semiconductor structure

Semiconductor package structure

A method of manufacturing a semiconductor structure is provided. The method includes providing a substrate, disposing a die over the substrate, forming a molding over the substrate and around the die, disposing a first dielectric layer over the die and the molding, curing the first dielectric layer under a first curing condition, disposing a second dielectric layer over the first dielectric layer, and curing the first dielectric layer and the second dielectric layer under the first curing condition.

Manufacturing method for semiconductor structure

A semiconductor device includes: a first dielectric layer having a first surface; a molding compound disposed on the first surface of the first dielectric layer; a second dielectric layer having a first surface disposed on the molding compound; a via disposed in the molding compound; and a first conductive bump disposed on the via and surrounded by the second dielectric layer; wherein the first dielectric layer and the second dielectric layer are composed of the same material. The filling material has a thickness between the second dielectric layer and the semiconductor die, and the diameter of the hole is inversely proportional to the thickness of the filling material.

Stacked semiconductor device and method of manufacturing the same

A semiconductor structure includes a substrate; a die disposed over the substrate, and including a die pad, a conductive via disposed over the die pad and a dielectric material surrounding the conductive via; a molding disposed over the substrate and surrounding the die; a lower dielectric layer disposed nearer the substrate and over the dielectric material and the molding; and an upper dielectric layer disposed further the substrate and over the lower dielectric layer, wherein a material content ratio in the upper dielectric layer is substantially greater than that in the lower dielectric layer, and the material content ratio substantially inversely affects a mechanical strength of the upper dielectric layer and the lower dielectric layer.

Semiconductor package structure and manufacturing method thereof

A video generating system includes: a plurality of image sensors, arranged to generate a plurality of images and a plurality of synchronization signals corresponding to the images; a combining circuit, coupled to the image sensors, arranged to generate a plurality of output images according to the images, and generate a plurality of output synchronization signals corresponding to the output images according to the synchronization signals; and a bus, coupled between the image sensors and the combining circuit, arranged to perform signal transmission. The image sensors comprise a first image sensor and a second image sensor; and when the combining circuit receives image data of at least a first image generated by the first image sensor, the combining circuit does not receive image data of at least a second image generated by the second image sensor at the same time.

Video generating system with multiple image sensors and related method thereof

A video generating system and a video generating method, which combine images generated by a plurality of different image sensors to generate output images, are provided. In the inventive video generating system and method, the image sensors share a signal transmission interface to transmit image data and synchronization signals in a time-shared manner to reduce the complexity of the signal transmission interface.

Growing community of inventors

Hsin-Chu, Taiwan

Chih-Kang Han