Au Optronics Corporation

Chunghwa Picture Tubes, Ltd.

Tpo Displays Corporation

Toppoly Optoelectronics Corporation

Chih-Kang Deng

Ming-Dou Ker

An Shih

Tang-Kui Tseng

Sheng-Chieh Yang

Wein-Town Sun

Ying-Hsin Li

An active device array substrate includes pixel units, scan lines, data lines, electrostatic discharge (ESD) protection elements, a short ring and an ESD biased generator. Each pixel unit is electrically connected to the corresponding scan line and data line. Each ESD protection element has a first connection terminal, a second connection terminal and a third connection terminal, wherein the first connection terminal is electrically connected to one of the corresponding scan line and data line, the second connection terminal is electrically connected to the short ring, and the third connection terminal is electrically connected to the ESD biased generator. As an ESD stress occurs, the ESD biased generator provides a voltage to the ESD protection elements to turn on them. It causes that the accumulated electrostatic charges are conducted into the lowest potential of the substrate through the short rings, so as to prevent the pixel units from ESD damaging.

Active device array substrate having electrostatic discharge protection capability

An ESD protection device with thicker polysilicon film, an electronic apparatus having the same, and a method for manufacturing the same are provided. The ESD protection device can be a diode or a MOS transistor with a thicker polysilicon film employed in an ESD protection circuit to protect an electronic apparatus. The electronic apparatus includes a substrate having a device area and an ESD protection circuit area. A first polysilicon film of a first thickness is formed on the device area of the substrate, so as to form an electronic device. A second polysilicon film of a second thickness is formed on the ESD protection circuit area, so as to form an ESD protection device. The second thickness, which is preferably about in the range of 100 to 500 nanometers, is thicker than the first thickness.

Method of forming ESD protection device with thick poly film

An electrostatic discharge protection device, an electrostatic discharge protection structure, and a manufacturing process of the device are provided. The electrostatic discharge protection device includes at least four doping regions, wherein two adjacent regions are of different types. The electrostatic discharge protection structure includes an electrostatic discharge bus, a plurality of first electrostatic discharge protection devices connecting to the gates of the display transistors and the electrostatic discharge bus, a plurality of second electrostatic discharge protection devices connecting to the source/drain of the transistors and the electrostatic discharge bus, and a plurality of third electrostatic discharge protection devices connecting to the input/output terminals of the drive circuit of the display and the electrostatic discharge bus.

Electrostatic discharge protection structure and electrostatic discharge protection device for a liquid crystal display, and method of making the same

A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer is formed on a substrate. A first region of a first carrier concentration is formed in the semiconductor layer. A second region of a second carrier concentration is formed in the semiconductor layer. An insulator is formed on the semiconductor layer. The insulator layer is etched to form at least a contact window. The contact window exposes a portion of an upper surface of the semiconductor layer. A metal layer is formed on the insulator layer. The metal layer fills up the contact window to contact the semiconductor layer.

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Taipei, Taiwan

Chih-Kang Deng