Inventec Corp.

Inventec (pudong) Technology Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Pegatron Corporation

Chih-Kai Yang

Yi-Lun Cheng

Feng-Ku Wang

Liang-Yin Chen

Yee-Chia Yeo

Huicheng Chang

Chia-Cheng Chen

Frank Tinghwa Wang

Chun-Lung Lin

Chun-Yen Chang

Yu-Tien Shen

Chun-Yi Chang

Jui-Chan Fan

Pinyen Lin

Ya Hui Chang

Chun-Hung Wu

Wei-Ting Chien

Yi-Chen Lo

Yu-Chih Cheng

Ming-Hung Lin

Yi-Shan Chen

Ya-Hui Chang

Wei-Yi Lin

Hsiang-Ming Chang

Huang-Cheng Ke

Shin-Hsin Hsien

Yu-Tse Lai

Meng-Lung Chiang

Kuo-Chi Ting

Yu-Wei Liu

Hua-Feng Chen

Chun-Liang Chen

Sheng-Chieh Hsu

Po-Hsuan Chen

Cheng-Shang Chou

Cheng-Shi Liu

Hsin-Chih Wang

Jyun-Ji Lu

Chung-Yi Huang

Wei-Hsin Wu

Shuang-An Lee

A critical dimension uniformity control method is provided. The method includes gathering a first CDU by a first critical dimension from a first wafer after being processed by a first surface process. The method includes determining a first calibration process based on the first CDU. The determining includes an intra dose correction step for correcting reticle-dependent deviation, a thru-slit dose sensitivity correction step for correcting time-dependent deviation, and an inter dose correction step for correcting process-dependent deviation. The method includes calibrating the first surface process by the first calibration process to determine a second surface process different from the first surface process.

Critical dimension uniformity (CDU) control method and semiconductor substrate processing system

A method for forming a semiconductor device is provided. In some embodiments, the method includes forming a target layer over a semiconductor substrate, forming a carbon-rich hard masking layer over the target layer, patterning features in the carbon-rich hard masking layer using an etching process, performing a directional ion beam trimming process on the features patterned in the carbon-rich hard masking layer, and patterning the target layer using the carbon-rich hard masking layer as a mask.

Method of forming a semiconductor device

A method of correcting a misalignment of a wafer on a wafer holder and an apparatus for performing the same are disclosed. In an embodiment, a semiconductor alignment apparatus includes a wafer stage; a wafer holder over the wafer stage; a first position detector configured to detect an alignment of a wafer over the wafer holder in a first direction; a second position detector configured to detect an alignment of the wafer over the wafer holder in a second direction; and a rotational detector configured to detect a rotational alignment of the wafer over the wafer holder.

Wafer positioning method and apparatus

In a method of forming a pattern over a semiconductor substrate, a target layer to be patterned is formed over a substrate, a mask pattern including an opening is formed in a mask layer, a shifting film is formed in an inner sidewall of the opening, a one-directional etching operation is performed to remove a part of the shifting film and a part of the mask layer to form a shifted opening, and the target layer is patterned by using the mask layer with the shifted opening as an etching mask. A location of the shifted opening is laterally shifted from an original location of the opening.

Method of manufacturing semiconductor devices

In an embodiment, a pattern transfer processing chamber includes a pattern transfer processing chamber and a loading area external to the pattern transfer processing chamber. The loading area is configured to transfer a wafer to or from the pattern transfer processing chamber. The loading area comprises a first region including a loadport, a second region including a load-lock between the first region and the pattern transfer processing chamber, and an embedded baking chamber configured to heat a patterned photoresist on the wafer.

Semiconductor processing tool and method of using an embedded chamber

A method for forming a semiconductor device is provided. The method for forming a semiconductor device is provided. The method includes coating a photoresist film over a target layer; performing a lithography process to pattern the photoresist film into a photoresist layer; performing a directional ion bombardment process to the photoresist layer, such that a carbon atomic concentration in the photoresist layer is increased; and etching the target layer using the photoresist layer as an etch mask.

Method for fabricating semiconductor device

In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

A centrifugal fan including an impeller housing and an impeller. The impeller housing has an accommodation space, an air inlet and an air outlet. The air inlet and the air outlet are connected to the accommodation space. The impeller is located in the accommodation space. The impeller includes a hub, a plurality of blades, and at least one heat conductive annular portion. The hub is rotatably disposed in the impeller housing. The plurality of blades are connected to an outer circumferential surface of the hub. The at least one heat conductive annular portion is connected to the plurality of blades.

Centrifugal fan

A heat dissipation system includes a single fan, first and second heat sources, first, second, and third heat pipes, and first and second heat dissipation arrays. The first heat pipe is thermally coupled with the first heat source. The second heat pipe is thermally coupled with the second heat source. The third heat pipe has a first position thermally coupled with the first heat pipe and a second position thermally coupled with the second heat pipe. The first heat dissipation array is arranged around the first position and thermally coupled with the third heat pipe. The second heat dissipation array is arranged around the second position and thermally coupled with the third heat pipe. The single fan is between the first and second heat sources, and configured to blow airflows towards the first and second heat sources, the first and second heat dissipation arrays.

Heat dissipation system

The invention provides a server device. The server device includes a casing, an electronic assembly, and a heat dissipation assembly. The casing includes a housing and a partition. The partition is disposed in the housing and forms an accommodation space and a heat dissipation space in the housing that are not communicated with each other. The housing has a plurality of first vent holes communicated with the heat dissipation space. The electronic assembly is located in the accommodation space. The heat dissipation assembly includes a heat dissipation component and a heat pipe. The heat dissipation component is located in the heat dissipation space. The heat pipe includes a heat absorption portion and a condensation portion connected to each other. The heat pipe is disposed through the partition, the heat absorption portion is thermally coupled to the electronic assembly, and the condensation portion is coupled to the heat dissipation component.

Server device

A heat pipe structure is used for cooling a heat source. The heat pipe structure includes a sleeve tube and a shaft. The sleeve tube includes an inner wall. The sleeve tube has a trench on the inner wall. The trench is at an outlet end of the sleeve tube. The trench extends in a circumferential direction of the sleeve tube. The shaft is connected to the heat source. The shaft is inserted into the sleeve tube from the outlet end such that the shaft is rotatable relative to the sleeve tube. The trench surrounds the shaft.

Heat pipe structure

A heat dissipation system configured to be in thermal contact with a heat source. The heat dissipation system includes a centrifugal fan, a heat pipe, a heat dissipater, and a heat conduction assembly. The centrifugal fan includes a housing and an impeller. The housing has an accommodation space, an inlet, and an outlet. The inlet and the outlet are connected to the accommodation space. The impeller is located in the accommodation space. The heat pipe is configured to be in thermal contact with the heat source. The heat dissipater is located at the outlet and in thermal contact with the heat pipe. The heat conduction assembly includes a first part configured for the heat source to be mounted thereon and in thermal contact with the heat source, and a second part disposed on the housing and partially located in the accommodation space.

Growing community of inventors

Taipei, Taiwan

Chih-Kai Yang