United Microelectronics Corp.

Chih-Jung Su

Shih-Fang Tzou

Chen-Ming Huang

Shui-Yen Lu

Po-Cheng Huang

Yi-Wen Chen

Chun-Tsen Lu

Jian-Wei Chen

A method of forming a semiconductor device is disclosed. A substrate having multiple fins is provided. An insulating layer fills a lower portion of a gap between two adjacent fins. At least one first stacked structure is formed on one fin and at least one second stacked structure is formed on one insulation layer. A first dielectric layer is formed to cover the first and second stacked structures. A portion of the first dielectric layer and portions of the first and second stacked structures are removed. Another portion of the first dielectric layer is removed until a top of the remaining first dielectric layer is lower than tops of the first and second stacked structures. A second dielectric layer is formed to cover the first and second stacked structures. A portion of the second dielectric layer is removed until the tops of the first and second stacked structures are exposed.

Method of forming semiconductor device

Growing community of inventors

Tainan, Taiwan

Chih-Jung Su