Qualcomm Incorporated

Chih-Iung Kao

Xiangdong Chen

Animesh Datta

Ohsang Kwon

Satyanarayana Sahu

Qi Ye

Renukprasad Hiremath

Divya Gangadharan

A CMOS device including a standard cell includes first and second transistors with a gate between the first and second transistors. One active region extends between the first and second transistors and under the gate. In a first configuration, when drains/sources of the first and second transistors on the sides of the gate carry the same signal, the drains/sources are connected together and to the gate. In a second configuration, when a source of the first transistor on a side of the gate is connected to a source voltage and a drain/source of the second transistor on the other side of the gate carries a signal, the source of the first transistor is connected to the gate. In a third configuration, when sources of the first and second transistors on the sides of the gate are connected to a source voltage, the gate floats.

Digital circuit design with semi-continuous diffusion standard cell

Growing community of inventors

San Diego, CA, United States of America

Chih-Iung Kao