Xiamen Sanan Integrated Circuit Co., Ltd.

Chih-Hung Yen

Wenbi Cai

Houng-Chi Wei

Jian Yang

Bin Li

An epitaxial structure includes a composite base unit and an emitter unit. The composite base unit includes a first base layer and a second base layer formed on the first base layer. The first base layer is made of a material of InGaAsN, in which 0<x≤0.2, and 0≤y≤0.035, and when y is not 0, x=3. The second base layer is made of a material InGaAs, in which 0.03≤m≤0.2. The emitter unit is formed on the second base layeropposite to the first base layer, and is made of an indium gallium phosphide-based material. A transistor including the epitaxial structure is also disclosed.

Epitaxial structure and transistor including the same

A cascode transistor device includes a semiconductor substrate, and a first and a second compound semiconductor transistors. The first compound semiconductor transistor includes a first n-type doping layer, a first p-type doping layer and a second n-type doping layer sequentially disposed on the semiconductor substrate. The second compound semiconductor transistor includes a third n-type doping layer, a second p-type doping layer and a fourth n-type doping layer sequentially disposed on the second n-type doping layer. Each of these doping layers is formed with an exposed metal contact. The exposed metal contact on the second n-type doping layer is electrically connected to the exposed metal contact on the third n-type doping layer.

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Xiamen, China

Chih-Hung Yen