Omnivision Technologies, Inc.

Chih-Hung Tu

Wei-Feng Lin

Chia-Yang Chang

Teng-Sheng Chen

Kuei-Cheng Liang

Trenched-bonding-dam devices and corresponding methods of manufacture are provided. A trenched-bonding-dam device includes a bonding dam structure positioned upon a top surface of a substrate. The bonding dam structure has a bottom surface attached to a top surface of the substrate, an inner dam surrounded by an outer dam, and a trench between the inner and outer dams. The device may further include an optics system including a lens and an adhesive positioned within a bonding region between a bottom surface of the optics system and a top surface of at least one of the inner and outer dams. The trench may be dimensioned to receive a portion of the excess adhesive flowing laterally out of the bonding region during bonding of the substrate to the optics system, laterally confining the excess adhesive and reducing lateral bleeding of the adhesive.

Trenched-bonding-dam device and manufacturing method for same

An encapsulated semiconductor device includes a device die with a semiconductor device fabricated thereon. A carrier layer opposite the device die covers the semiconductor device. A dam supports the carrier layer above the device die, the dam being located therebetween. The semiconductor device further includes a first sealant portion for attaching the dam to the device die, and a means for attaching the dam to the carrier layer. The device die, the dam, and the carrier layer form a sealed cavity enclosing the semiconductor device. A method of encapsulating semiconductor devices formed on a device wafer includes forming an assembly including a carrier wafer and a plurality of dams thereon. After the step of forming, the method attaches the plurality of dams to the device wafer to form a respective plurality of encapsulated semiconductor devices.

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Hsinchu, Taiwan

Chih-Hung Tu