Au Optronics Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Hung Su

Chen-Shien Chen

Hon-Lin Huang

Hsin-Hung Lee

Chin-Yu Ku

Wei-Li Huang

Chi-Cheng Chen

Cheng-Lung Yang

Kun-Ming Tsai

Chun-Yi Wu

Kuang-Yi Wu

Wei-Je Lin

Chun-Yi Chiu

Yi Sheng Cheng

Ta-Chin Wei

Chih-Feng Sung

Jiin-Jou Lih

Yi-Chang Tsao

I-Chang Tsao

A method of forming a semiconductor device includes following steps. A first organic layer is formed to cover a first conductive layer. A first opening is formed in the first organic layer to expose a first surface of the first conductive layer. A first silicon layer is formed on a sidewall of the first opening and the first surface of the first conductive layer. A first dielectric layer is formed on the sidewall of the first opening and the first surface of the first conductive layer over the first silicon layer. By using a first mask, portions of the first silicon layer and the first dielectric layer on the first surface are simultaneously removed to expose the first surface, wherein after removing the portions of the first silicon layer and the first dielectric layer, the first dielectric layer covers a top surface of the first silicon layer.

Method of forming semiconductor device

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

Semiconductor device structure with magnetic element

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation layer covering the magnetic element and a portion of the semiconductor substrate. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding edges of the magnetic element.

Semiconductor device structure with magnetic element covered by polymer material

A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.

Semiconductor devices

A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.

Structure and formation method of semiconductor device with magnetic element covered by polymer material

Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.

Semiconductor devices and methods of forming the same

An organic light-emitting diode and method of fabricating the same. The organic light-emitting diode includes a first substrate, a first electrode installed on an inner surface of the first substrate, an organic light-emitting layer installed on the first electrode, a second electrode installed on the organic light-emitting layer, an oxide layer formed on the second electrode, and a second substrate bound to the inner surface of the first substrate to form an airtight space.

Organic light-emitting diode and method of fabricating the same

A method for detecting moisture in a display device having at least one display element includes incorporating at least one moisture detector in a predetermined location of the display device, the moisture detector including a material layer comprising metal formed between a first electrode and a second electrode. One or more display elements are encapsulated between a first and second shields. A resistance of the material layer is detected so as to determine a level of moisture.

Method and structures for detecting moisture in electroluminescence display devices

A method of fabricating an organic light emitting display device, the method comprising: providing a substrate; forming an organic light emitting unit on the substrate; and forming a passivation structure layer including organic and inorganic contents over the organic light emitting unit and the substrate, wherein the passivation layer is formed by supplying one or more source compound of respective ratio varying in time.

Organic light emitting display device with passivation structure

An encapsulation structure of organic electroluminescence device (OELD) is provided. The encapsulation structure comprises a substrate, an OELD, a soft protection layer, a moisture absorption layer and a rigid protective layer. The OELD is disposed over the substrate. The soft protection layer is disposed over the substrate, and encloses the OELD. The moisture absorption layer encloses the soft protection layer. The rigid protective layer encloses the moisture absorption layer.

Encapsulation structure of organic electroluminescence device

Methods and devices are disclosed for detecting undesired moisture for a luminescence display device. A moisture detector is encapsulated between two shields with one or more display elements, and has a layer of metal placed in a predetermined location close to the display elements that does not affect an operation thereof, wherein the undesired moisture is detected by monitoring one or more moisture-affected material characteristics thereof.

Method and device for detecting moisture in electroluminescence display devices

A method of fabricating an organic electroluminescent device. A substrate comprising an organic electroluminescent unit thereon is provided. A passivation layer is formed on the substrate to cover the organic electroluminescent layer. An ion beam is provided to perform a surface treatment on the passivation layer. A plastic layer is formed on the passivation layer. The steps of forming the passivation layer, providing the ion beam and forming the plastic layer are repeated at least once to enhance device reliability. In addition, a solid passivation layer is formed by the steps of forming the passivation layer, providing the ion beam and forming the plastic layer.

Method of fabricating organic light emitting diode device

A display device includes a substrate, a display unit disposed on the substrate, and a passivation structure covering the substrate and the display unit. The passivation structure is composed of an organic/inorganic film. An inner side of the organic/inorganic film, which is closer to the display unit, has a maximum organic/inorganic ratio which gradually decreases outward.

Display device with passivation structure

A method of preventing the cathode of an active matrix organic light emitting diode from breaking. A substrate having an array of thin film transistors thereon is provided. Each thin film transistor includes a gate electrode, a channel layer, a source terminal and a drain terminal. A passivation layer is formed over the substrate and then the passivation layer is planarized. Thereafter, an opening that exposes the drain terminal is formed in the passivation layer. An anode layer is formed over the passivation layer and the interior of a portion of the opening so that the drain terminal and the anode layer are electrically connected. A light-emitting layer and a cathode layer are sequentially formed over the substrate to form an active matrix organic light emitting device.

Growing community of inventors

Hsinchu, Taiwan

Chih-Hung Su