Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Hung Nien

Yee-Chia Yeo

Chii-Horng Li

Chun-Wei Chang

Yen-Ru Lee

Jian-Hong Lin

Chien-Wei Lee

Heng-Wen Ting

Chih-Yun Chin

Yung-Huei Lee

Pei-Chun Liao

Jing-Yi Yan

Wen-Hsien Kuo

Wei-Yang Lee

I-Hsieh Wong

Wei-Ken Lin

Te-En Cheng

Wei-Chun Tan

Yung-Hui Lin

A phase-change memory (PCM) cell is provided to include a first electrode, a second electrode, and a phase-change feature disposed between the first electrode and the second electrode. The phase-change feature is configured to change its data state based on a write operation performed on the PCM cell. The write operation includes a reset stage and a set stage. In the reset stage, a plurality of reset current pulses are applied to the PCM cell, and the reset current pulses have increasing current amplitudes. In the set stage, a plurality of set current pulses are applied to the PCM cell, and the set current pulses exhibit an increasing trend in current amplitude. The current amplitudes of the set current pulses are smaller than those of the reset current pulses.

Phase-change memory cell and method for fabricating the same

The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over the fin structure, an epitaxial region formed in the fin structure and adjacent to the gate structure. The epitaxial region can embed a plurality of clusters of dopants.

Source/drain structure for semiconductor device

A method includes forming a first fin extending from a substrate, forming a first gate stack over and along sidewalls of the first fin, forming a first spacer along a sidewall of the first gate stack, the first spacer including a first composition of silicon oxycarbide, forming a second spacer along a sidewall of the first spacer, the second spacer including a second composition of silicon oxycarbide, forming a third spacer along a sidewall of the second spacer, the third spacer including silicon nitride, and forming a first epitaxial source/drain region in the first fin and adjacent the third spacer.

Semiconductor device and method

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Changhua, Taiwan

Chih-Hung Nien