Industrial Technology Research Institute

Atomic Energy Council-Institute of Nuclear Energy Research

Chih-Hung Chiou

Chih-Hung Wu

Jung-Tsung Hsu

Pei-Hsuan Wu

Shang-Fu Chen

I-Liang Chen

Andrew-Yen C Tzeng

A solar cell with a superlattice structure and a fabricating method thereof are provided, which includes fabricating a superlattice structure of GaAsN/GaInAs, GaAsN/GaSbAs, or GaAsN/GaInSbAs between a base and an emitter of a middle cell of a triple junction solar cell by a strain-compensation technology. The provided solar cell not only decreases crystalline defects and increases the critical thickness of the crystal, but also makes the energy bandgap of GaAsN and GaInAs reach around the energy of 1.0 eV (electron volt). Hence, the absorption region can be raised to around the energy of 1.0 eV to enhance the efficiency of the solar cell.

Solar cell with superlattice structure and fabricating method thereof

Growing community of inventors

Hsinchu, Taiwan

Chih-Hung Chiou