Industrial Technology Research Institute

Novatek Microelectronics Corp.

Darfon Electronics Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

United Microelectronics Corp.

Au Optronics Corporation

Nan Ya Technology Corporation

Qisda Corporation

Faraday Technology Corporation

Primax Electronics Ltd.

Synopsys, Inc.

Benq Corporation

Advanced-connectek Inc.

Qisda (suzhou) Co., Ltd.

Chih-Hung Chen

Ming-Ching Kuo

Shiau-Wen Kao

Kei-Wei Chen

Chih-Hao Wang

Po-Fu Huang

Ying-Lang Wang

Chia-Jung Hsu

Chiang-Lin Shih

Hsin-Hsin Shen

Chih-Hsiang Chang

Ling-Hsi Chao

Yi-An Lin

Chin-Hung Lin

Yen-Ting Chen

Chih-Chung Yen

On Lee

Kwo-Jen Liu

Chih-Hao Chen

Chin-Fu Chen

Tzu-Cheng Yang

Szu-Yao Chang

Chih-Peng Liu

Li-Te Chang

Chrong-Shiong Hwang

Tung-Lou Lin

Yi-Yun Tsai

Ting-Shou Chen

Cheng-Dao Su

Huicheng Chang

Liang-Yin Chen

Su-Hao Liu

Yi-Hung Lin

Kuo-Ju Chen

Hui-Chi Huang

Lun-Kuang Tan

Hsin-Cheng Ho

Wei-Ming You

Shin-Shin Wang

Chun-Hao Kung

Chih-Chieh Huang

Kao-Feng Liao

Lain-Tze Lee

Te-Sun Wu

Wen-Hsiang Chien

Po-Chun Hou

Chung-Wai Shiau

Horng-Yuan Shih

Ching-Lin Yeh

Kuo-Kuei Huang

Ying-Chu Shih

Yen-Chun Chen

Kuen-Feng Chen

Pei-Yi Tsai

Yi-Hsun Chen

Tsai-Chi Yeh

Peng-Un Su

An-Ru Andrew Cheng

Wen-Hao Yu

Hsin-Chao Chen

Yuan-Jang Tsai

Jie-Huang Huang

Shyh-An Tang

Chi-Y Hung

Chien-Chung Lin

Jing-Qing Chan

Chien-Mei Wang

Cheng-Yu Hung

Yung-Shin Kao

Yow-Lone Chang

Ling-Mei Wang

Kuei-Tai Lai

Jui-Wen Huang

Cheng-Jye Chu

Ching-Huai Ko

Ming-Hong Chen

Yi-Ming Wu

Shang-Lin Chiang

Pei-Ling Tsai

Chu-Huang Chen

Kuo-Wei Ling

Liang-Yin Ke

An-Ru Cheng

Sung-Dtr Wu

A keyswitch structure includes a base, a keycap, a first support, a second support, and a connection structure. The keycap moves up and down relative to the base through the first support and the second support. The connection structure is disposed on the base and includes a vertical-motion limiting part and a horizontal-motion limiting part. The first support includes a rod-shaped connection portion and is connected to the connection structure through the rod-shaped connection portion. The vertical-motion limiting part prevents the rod-shaped connection portion from vertically moving. The horizontal-motion limiting part limits the horizontal movement of the rod-shaped connection portion. The vertical-motion limiting part and the horizontal-motion limiting part are separated in the rotation axis of the rod-shaped connection portion.

Keyswitch structure

A keyswitch assembly includes a switch module, a support mechanism, a blocking mechanism, an enhancing light source, and a backlight source. The switch module includes a substrate, a signal generator, and a signal sensor. The signal generator generates a sensing signal. The signal sensor receives the sensing signal to obtain a sensing strength. The support mechanism is disposed on the substrate. The blocking mechanism is disposed on the substrate and has a light-permeable portion. A portion of the blocking mechanism inserts into or escapes from a gap between the signal generator and the signal sensor. The backlight source is disposed on the substrate and located outside the vertical projection of the blocking mechanism on the substrate. The enhancing light source is disposed on the substrate and located within the vertical projection of the blocking mechanism on the substrate and corresponds to the light-permeable portion.

Keyswitch assembly

A keyswitch assembly includes a switch module, a support mechanism, and a blocking mechanism. The switch module includes a substrate, a signal generator, and a signal sensor. The signal generator provides a sensing signal. The signal sensor receives the sensing signal to obtain a sensing intensity. The support mechanism is disposed on the substrate. A top portion of the support mechanism moves in response to a pressing force. The blocking mechanism includes a pivoting portion rotatably disposed on the substrate, a connecting piece extending from the pivoting portion and movably connected to the support mechanism to be driven by the top portion to swivel relative to the substrate, and a blocking piece extending from the pivoting portion and driven by the connecting piece to be inserted into or escape from the gap between the signal generator and the signal sensor to change the magnitude of the sensing intensity.

Keyswitch assembly and support mechanism thereof

The present application discloses a method for fabricating a semiconductor device with a protruding contact. The method includes providing a substrate; forming a bit line structure on the substrate; forming a capacitor contact structure next to the bit line structure; recessing a top surface of the bit line structure; and forming a landing pad layer covering a portion of a top surface of the capacitor contact structure and an upper portion of a sidewall of the capacitor contact structure.

Method for fabricating semiconductor device with protruding contact

The present disclosure provides a method for manufacturing a semiconductor structure with capacitor landing pads. The method includes the following operations: providing a semiconductor substrate; forming a bit line structure protruding from the semiconductor substrate; depositing a landing pad layer to cover the bit line structure; planarizing a top surface of the landing pad layer; limning a trench in the landing pad layer to form the capacitor landing pads; forming an air gap within a sidewall of the bit line structure; and filling a first dielectric layer in the trench to seal the air gap.

Method for manufacturing semiconductor structure with capacitor landing pad

The present application discloses a semiconductor device with a protruding contact and a method for fabricating the semiconductor device with the protruding contact. The semiconductor device includes a substrate, a capacitor contact structure protruding from the substrate, and a landing pad layer covering a portion of a top surface of the capacitor contact structure and an upper portion of a sidewall of the capacitor contact structure.

Semiconductor device with protruding contact and method for fabricating the same

A method for ex vivo treating blood or plasma is provided. The method includes (a) ex vivo contacting a blood or plasma with an enzyme composition to react the enzyme composition with the blood or plasma, wherein the enzyme composition is capable of eliminating electronegative low-density lipoprotein from the blood or plasma by the activity of the enzyme composition, and the enzyme composition is selected from a group consisting of: a first enzyme for eliminating a glycan residue of an electronegative low-density lipoprotein (LDL); a second enzyme for eliminating ceramide carried by a electronegative low-density lipoprotein (LDL); and a combination thereof; and (b) terminating contact between the blood or plasma and the enzyme composition to terminate the reaction of the enzyme composition with the blood or plasma.

Method for ex vivo treating blood or plasma

A voltage controlled oscillator is provided. The voltage controlled oscillator includes a current controlled oscillator, a voltage to current conversion circuit and a noise cancellation circuit. The current controlled oscillator is configured to receive a bias current and generate an oscillating signal with an oscillating frequency according to the bias current. The voltage to current conversion circuit is coupled to a power supply voltage and configured to generate a supply current according to an input voltage. The noise cancellation circuit is configured to receive a bias voltage and the supply current from the voltage to current conversion circuit, and configured to generate a noise cancellation current in response to power supply voltage variation and cancel the noise cancellation current from the supply current to generate the bias current. The bias voltage of the noise cancellation circuit is coupled to an internal voltage of the voltage to current conversion circuit.

Voltage controlled oscillator

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a dielectric layer, a contact plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The dielectric layer is positioned over the gate structure and the source/drain structure. The contact plug is positioned passing through the dielectric layer. The contact plug includes a first metal compound including one of group III elements, group IV elements, group V elements or a combination thereof.

Semiconductor structure with doped contact plug and method for forming the same

A slurry dispensing unit for a chemical mechanical polishing (CMP) apparatus is provided. The slurry dispensing unit includes a nozzle, a mixer, a first fluid source, and a second fluid source. The nozzle is configured to dispense a slurry. The mixer is disposed upstream of the nozzle. The first fluid source is connected to the mixer through a first pipe and configured to provide a first fluid including a first component of the slurry. The second fluid source is connected to the mixer through a second pipe and configured to provide a second fluid including a second component of the slurry, wherein the second component is different from the first component.

Apparatus and method for timed dispensing various slurry components

An electronic device includes a substrate, first signal lines, pixel structures, first pads, transmission pads, a first combination circuit board, and a transmission circuit board. The first pads are electrically connected to some of a plurality of first signal lines. The transmission pads are electrically connected to some of the first signal lines. The first combination circuit board is disposed between a first side and a second side of the substrate opposite to each other. The transmission circuit board is disposed between the first combination circuit board and the second side of the substrate. The first combination circuit board is electrically connected to at least some of the first pads, and a first pitch exists between the adjacent first pads. The transmission pads are electrically connected to the transmission circuit board, and a transmission-pad pitch exists between the adjacent transmission pads. The transmission-pad pitch is greater than the first pitch.

Electronic device

A compound of formula (I) or a pharmaceutically acceptable salt thereof is provided. In formula (I), Ar is indazole, 5-isoquinoline, 6-isoquinoline, or their N-oxide. X is &#x2014;C(&#x2550;Z)&#x2014;, wherein Z is N&#x2014;CN, NH, NR, NCOR, NCONRR, NCO-aryl, S, or O. Y and J are independently H, alkyl, aryl, aminoalkyl, &#x2014;NH, &#x2014;CN, &#x2014;OH, &#x2014;O-alkyl, &#x2014;O-aryl, &#x2014;COOH, &#x2014;COOR, &#x2014;CONHR, &#x2014;CONHCH-aryl, &#x2014;CONRCH-aryl, &#x2014;NHCOR, halogen, halogened alkyl, -alkyl-OR, -alkyl-ONO, alkyl-ONO, &#x2014;OCOOR, &#x2014;O(C&#x2550;O)-aryl, &#x2014;CHROH, &#x2014;CHOH, &#x2014;CHO(C&#x2550;O)-aryl, &#x2014;CHO(C&#x2550;O)&#x2014;R, &#x2014;CHRO(C&#x2550;O)-aryl, &#x2014;CHRO(C&#x2550;O)&#x2014;R, unsaturated carboxylic ester, substituted alkynyl, &#x2014;NHSOR, &#x2014;SOR, &#x2014;SONHR, or &#x2014;SONRR, or Y and J bond together to form a carbocylic or aromatic ring, wherein Rand Rare independently H, substituted C1-C6 alkyl, substituted aryl, cycloalkyl, alkylaryl, -alkyl-NRR, &#x2014;S(O)-(alkyl-NRR). R, Rand Rare H, C1-C6 alkyl, cycloalkyl, aryl, alkylaryl, alkylheteroaryl, alkylheterocycle, wherein any one thereof is optionally substituted with one or more of OH, NO, or NRR. 

Compounds for inhibiting AGC kinase and pharmaceutical compositions comprising the same

A semiconductor apparatus including a substrate, an electrostatic discharge protection device, a resistor device, and a first metal layer is provided. The substrate defines a pad area and includes a first area and a second area. The first area has a recess, the second area is disposed in the recess, and the pad area is partially overlapped with the first area and the second area. The electrostatic discharge protection device is disposed in the first area of the substrate. The resistor device is disposed in the second area of the substrate. The first metal layer is disposed above and electrically connected to the electrostatic discharge protection device and the resistor device.

Semiconductor apparatus

A wafer polishing apparatus is described herein. The wafer polishing apparatus includes a polish module configured to apply air pressure to a first surface of a wafer while performing a polishing process on a second surface of the wafer. In some implementations, the polish module is further configured to perform a cleaning process and/or a drying process on the second surface of the wafer, such that the same wafer polishing apparatus is configured to perform the polishing process, the cleaning process, and/or the drying process. In some implementations, the polishing module is further configured to air seal edges of the wafer during the polishing process, the cleaning process, and/or the drying process.

Backside polisher with dry frontside design and method using the same

A connector fixing structure having a transmission plug and an adapter plug; wherein the transmission plug is respectively set with a first magnetic element, a guide slot, and a positioning groove; and the adapter plug is respectively set with a signal jack, a second magnetic element, a protruding block, and a resilient piece at the positions of the connection section. The first plug of small size set in the transmission plug can electrically connected with the signal jack. And, the first magnetic element and the second magnetic element can be mutually adsorbed, the protruding block can be mutually combined, and the positioning groove can be mutually engaged with the resilient piece. Therefore, the multi-point stable combination between the transmission plug and the adapter plug is achieved. It also enables the first plug to perform the connection ability after the second plug penetrates through the fitting hole of smaller size.

Connector fixing structure

Growing community of inventors

Hsinchu, Taiwan

Chih-Hung Chen