Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Hui Weng

Harry-Hak-Lay Chuang

Chih-Yang Chang

Tien-Wei Chiang

Chia-Hsiang Chen

Meng-Chun Shih

Ching-Huang Wang

Chia Yu Wang

Clement Hsingjen Wann

Chih-Hsin Ko

Shao-Ming Yu

Wei-Sheng Yun

Hsin-Chih Chen

In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data sate. The first random bit is then read from the MRAM cell.

Magnetoresistive random-access memory (MRAM) random number generator (RNG) and a related method for generating a random bit

In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data state. The first random bit is then read from the MRAM cell.

A test apparatus includes a tray including at least a first region and a second region, and a cap disposed over the tray. The cap includes a cap body, and at least a first magnet and a second magnet disposed over the cap body. The first magnet is configured to provide a first magnetic field to the first region of the tray, and the second magnet is configured to provide a second magnetic field to the second region of the tray. A strength of the first magnetic field is different from a strength of the second magnetic field.

Test apparatus and testing method using the same

Methods of manufacturing semiconductor devices are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a protective material over a bottom surface and edges of the workpiece. A top surface of the workpiece is processed. The protective material protects the edges and the bottom surface of the workpiece during the processing of the top surface of the workpiece.

Methods of manufacturing semiconductor devices including use of a protective material

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Tainan, Taiwan

Chih-Hui Weng