Mikro Mesa Technology Co., Ltd.

Chih-Hui Chan

Li-Yi Chen

Pei-Yu Chang

Chun-Yi Chang

Hsin-Wei Lee

Shih-Chyn Lin

A transfer head array includes a body and a plurality of transfer heads. The body has a first surface, a second surface opposite to the first surface, and a plurality of recesses. The first surface has at least one chucking region and at least one interference avoidance region, and the recesses are separated from each other and are disposed in the interference avoidance region. The transfer heads are disposed on the chucking region.

Transfer head array and transferring method

A method for preparing a plurality of micro-devices for transfer includes temporarily bonding the micro-devices onto a carrier substrate; testing the micro-devices on the carrier substrate to determine if there is at least one first failed micro-device in the micro-devices; and removing the first failed micro-device from the carrier substrate.

Intermediate structure for transfer, method for preparing micro-device for transfer, and method for processing array of semiconductor device

A light-emitting diode (LED) lighting device includes a substrate, an isolation layer, a first bottom electrode, a second bottom electrode, at least one first vertical LED, a first conductive bonding layer, at least one second vertical LED, a second conductive bonding layer, a first transparent sealing material, a second transparent sealing material, and a top electrode. The substrate has a base portion and a plurality of protruding portions present on the base portion. The base portion and the protruding portions cooperate to define at least one first recess and at least one second recess. At least one of the first recess and the second recess has a bottom surface and at least one sidewall adjacent to the bottom surface. The bottom surface and the sidewall are reflective. The first vertical LED and the second vertical LED are electrically connected in series.

Light-emitting diode lighting device

A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a current controlling structure, a first electrode, and a second electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling structure is joined with the first type semiconductor layer, and the current controlling structure has at least one current-injecting zone therein. The first electrode is electrically coupled with the first type semiconductor layer through the current-injecting zone of the current controlling structure. The second electrode is electrically coupled with the second type semiconductor layer.

Light-emitting diode

A LED display includes a bottom substrate, a first bottom electrode, a micro light emitting device, a wavelength conversion layer, an opposite electrode, and a first isolation layer. The first bottom electrode is disposed on the bottom substrate. The micro light emitting device is disposed on the first bottom electrode and includes at least one current controlling structure having at least one opening therein. The wavelength conversion layer covers the micro light emitting device, in which the wavelength conversion layer converts the light from a range of initial wavelengths into a range of predetermined wavelengths, and the range of predetermined wavelengths is greater than the range of initial wavelengths. The opposite electrode is electrically connected to the micro light emitting device. The first isolation layer is disposed between the micro light emitting diode and the opposite electrode to isolate the first bottom electrode and the opposite electrode.

Light-emitting diode display

A light-emitting device display includes a substrate, a first bottom electrode, a second bottom electrode, a micro light emitting device, a first isolation layer, an opposite electrode, and an encapsulation layer. The first and second bottom electrodes are disposed on the substrate. The micro light emitting device is disposed on the first bottom electrode and electrically connected to the first bottom electrode. The first isolation layer at least partially covers a side surface of the micro light emitting device, in which the first isolation layer has a refractive index n, and the micro light emitting device has a refractive index n, and n&#x2267;n. The opposite electrode is disposed on the micro light emitting device and electrically connected to the micro light emitting device and the second bottom electrode. The encapsulation layer at least covers the micro light emitting device and the first isolation layer.

Light-emitting diode display and manufacturing method thereof

A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a first current controlling structure, and a first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The second type semiconductor layer has a first region and a second region, in which the first region has a first threading dislocation density, the second region has a second threading dislocation density, and the first threading dislocation density is greater than the second threading dislocation density. The first current controlling structure is joined with the first type semiconductor layer and has at least one first current-injecting zone therein, in which the vertical projection of the second region on the first current controlling structure at least partially overlaps with the first current-injecting zone. The first electrode is electrically coupled with the first type semiconductor layer.

A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first current controlling layer, a first electrode, and a second electrode. The second type semiconductor layer and the first current controlling layer are joined with the first type semiconductor layer. The first current controlling layer has at least one opening therein. The first electrode is electrically coupled with the first type semiconductor layer through the opening. The second electrode is electrically coupled with the second type semiconductor layer. At least one of the first electrode and the second electrode has a light-permeable part. A vertical projection of the first current controlling layer on said one of the first electrode and the second electrode overlaps with the light-permeable part. The light-permeable part is transparent or semi-transparent.

Micro-light-emitting diode

A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor layer, a first edge isolation structure, a first electrode, and a second electrode. The second type semiconductor layer and the first edge isolation structure are joined with the first type semiconductor layer. The first electrode is electrically coupled with the first type semiconductor layer. At least a part of a vertical projection of an edge of the first type semiconductor layer on the first electrode overlaps with the first electrode. The first edge isolation structure is at least partially located on the part of the first type semiconductor layer. The second electrode is electrically coupled with the second type semiconductor layer.

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Tainan, Taiwan

Chih-Hui Chan