Tsinghua University

Taiwan Semiconductor Manufacturing Comp. Ltd.

Read Rite Corporation

National Taiwan University

National Yang Ming Chiao Tung University

China Steel Corporation

Chih-Huang Lai

Kuo-Feng Huang

Yu-Jen Wang

Denny Tang

Ding-Shuo Wang

Tai Min

Sheng-Huang Huang

Zhupei Shi

Ya-Chen Kao

Ming-Han Tsai

Chun-Jung Lin

Wen-Chin Lin

Robert Earl Rottmayer

Hua-Ching Tong

Hao-Cheng Hou

Wen-Cheng Chen

Ming-Te Liu

Meng-Shian Lin

Chao-Chien Chiang

Chao-Hsiung Wang

Ronald A Barr

Lien-Chang Wang

Kenneth E Knapp

Jian-Gang Zhu

Yu-Lun Chueh

Liang-Wei Wang

Billy W Crue, Jr

Chia-Chang Lee

Charles W Miller

Wen Chin Lin

Jui-Tung Chang

Yun-Chung Wu

Wei-Sheng Chen

Rong-Zhi Chen

Fan-Wei Liu

Hsiu-Hau Lin

Yuan-Chieh Tseng

Chun-Hao Chiu

Jaw-Yeu Liang

Deng-Far Hsu

Yun-Chieh Pai

Jung-Wei Liao

Yu-Jung Chou

Ruo-Fan Jiang

Nazmun Nahar Shams

David Vokoun

Tzu-Ming Cheng

Yu-Yi Liao

Chih-Huo Wu

Wen-Chieh Shih

Yu-Shen Yen

A magnetoresistive sensor and a manufacturing method thereof are provided. The method includes: forming an initial reference layer in an annular shape, wherein the initial reference layer includes an anti-ferromagnetic layer and a ferromagnetic layer; performing a heat treatment on the initial reference layer, wherein the ferromagnetic layer is magnetized to have a magnetization direction oriented along a vortex path during a heating step of the heat treatment, and an exchange bias oriented along the vortex path is induced at an interface of the anti-ferromagnetic layer and the ferromagnetic layer during a cooling step of the heat treatment; patterning the initial reference layer to form separated reference layers, wherein the reference layers are respectively formed in a annular sector shape, and the reference layers are arranged along the vortex path; forming spacer layers and free layers to form magnetoresistive devices; routing the magnetoresistive devices to form the magnetoresistive sensor.

Magnetoresistive sensor and manufacturing method thereof

A method for recovering a resource from a CIGS thin-film solar cell to be recycled includes a) providing the CIGS thin-film solar cell, and b) subjecting the CIGS thin-film solar cell to a cooling treatment at a predetermined temperature, such that a light absorbing unit of the CIGS thin-film solar cell can be recovered due to thermal strain difference of materials of the CIGS thin-film solar cell.

Method for recovering resource from CIGS thin-film solar cell

A hydrogen sensing device includes a multi-layered structure member. The multi-layered structure member includes a stack of alternatingly disposed magnetic layers and non-ferromagnetic layers. One of the magnetic layers is a topmost layer of the multi-layered structure member. The topmost layer includes a palladium-based material to detect hydrogen.

Hydrogen sensing device

A spin-orbit torque magnetic random access memory includes a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer including a ferromagnetic first metal layer, an anti-ferromagnetic second metal layer, and a third metal layer for generating spin-Hall effect. The first metal layer has a thickness ranging from 0.5 nm to 1.5 nm and exhibits perpendicular magnetic anisotropy (PMA). The second metal layer has a thickness greater than 6 nm for providing an exchange bias field. The second metal layer is an IrMn layer not undergone out-of-plane magnetic annealing or coating and exhibiting no PMA. The magnetic free layer has a coercive magnetic field (H) upon reaching the critical current density, and |H|&#x3e;|H|.

Spin-orbit torque magnetic random access memory

A method for making an ordered magnetic alloy includes (a) providing a thermally conductive base having opposite first and second surfaces; (b) forming a thermal barrier layer on the first surface of the thermally conductive base; (c) forming a disordered magnetic alloy layer on the thermal barrier layer, the disordered magnetic alloy layer being made from a disordered alloy which contains a first metal selected from Fe, Co, and Ni, and a second metal selected from Pt and Pd; and (d) after step (c), applying a transient heat to the thermally conductive base to cause rapid thermal expansion of the thermally conductive base, which, in turn, causes generation of an in-plane tensile stress in the disordered magnetic alloy layer.

Method for making an ordered magnetic alloy

An SOT-MRAM comprises a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer. The magnetic free layer includes a first metal film exhibiting ferromagnetic characteristics, and a second metal film for generating a spin-Hall effect. The first metal film has a thickness sufficient to allow the magnetic free layer, after being applied with a first external magnetic field which is subsequently removed, to have a magnetization ratio ranging from &#x2212;0.9 to 0.9. The first metal film, upon being applied with a second external magnetic field and an electric pulse, has multiple magnetic domains when a current density resulting from the electric pulse is greater than a critical value.

Spin-orbit torque magnetic random access memory and method of writing the same

A magnetic electronic device comprises a substrate, a first buffer layer, a first CoFeB layer, a first metal oxidation layer, a second buffer and a capping layer. The first buffer layer is disposed on the substrate. The first CoFeB layer is disposed on the first buffer layer. The first metal oxidation layer is disposed on the first CoFeB layer. The second buffer is disposed on the first metal oxidation layer, and the material of the second buffer layer includes platinum, palladium, tantalum or their any combination. The capping layer disposed on the second buffer. A manufacturing method of the magnetic electronic device is also disclosed.

Magnetic electronic device and manufacturing method thereof

One method includes forming an anti-ferromagnetic layer on a substrate. A ferromagnetic layer may be formed on the anti-ferromagnetic layer. The ferromagnetic layer includes a first, second and third portions where the second portion is located between the first and third portions. A first ion irradiation is performed to only one portion of the ferromagnetic layer. A second ion irradiation is performed to another portion of the ferromagnetic layer.

Method of fabricating a magnetoresistive random access structure

A magnetic electronic device comprises a substrate, a buffer layer, a first CoFeB layer, a first metal oxidation layer and a capping layer. The buffer layer is disposed above the substrate. The first CoFeB layer is disposed above the buffer layer. The first metal oxidation layer is disposed above the first CoFeB layer. The capping layer is disposed above the first metal oxidation layer and covers the first metal oxidation layer. A manufacturing method of the magnetic electronic device is also disclosed.

Magnetic electronic device

A magnetic recording medium includes: a substrate, and a magnetic recording layer that is made from a material having the chemical formula of FeMnPt, and that has a bottom surface and an upper surface; wherein x, y, and z indicate average atomic concentrations for Fe, Mn, and Pt, and x+y+z is 100, x and y being greater than 0 and not greater than 65, z being in the range from 35 to 60; and wherein atomic concentration of Fe is gradually decreased from the upper surface to the bottom surface, and atomic concentration of Mn is gradually increased from the upper surface to the bottom surface so that the ferromagnetic property of the magnetic recording layer is gradually reduced from the upper surface to the bottom surface.

Magnetic recording media and method for making the same

A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.

Domain wall assisted spin torque transfer magnetresistive random access memory structure

A method for manufacturing a cobalt (Co) alloy-based ceramic composite sputtering target is provided. A cobalt ingot and a chromium (Cr) ingot are melted in vacuum and then nebulized to form a cobalt-chromium (CoCr) alloy powder. Additionally, a ceramic powder and a platinum powder are wetly mixed to form a platinum-ceramic (Pt-ceramic) slurry, in which the ceramic powder is applied onto the platinum powder's surface uniformly. Next, the CoCr alloy powder and the Pt-ceramic slurry are wetly mixed to form a CoCrPt-ceramic slurry. Thereafter, the CoCrPt-ceramic slurry is dried, molded and compressed to form the cobalt alloy-based ceramic composite sputtering target. The resulted cobalt alloy-based ceramic composite sputtering target, which has a fine and dense structure, uniform composition and lower magnetic permeability, is beneficial to a magnetron sputter deposition process, as well as a film sputtering process used in the magnetic recording industry.

Method for manufacturing cobalt alloy-based ceramic composite sputtering target

A perpendicular magnetic recording medium includes a substrate, an antiferromagnetic layer disposed above the substrate, and a perpendicular magnetic recording layer formed on the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer.

Perpendicular magnetic recording medium

An inductor includes: a substrate; an insulator layer; a conductive coil; and a permeability-enhancing film of a multi-layer structure. The multi-layer structure includes at least one repeating unit that has at least two layers. The two layers exhibit an exchange-coupling effect and include a first ferromagnetic layer of a first ferromagnetic material and an exchange-coupling layer.

Inductor

A perpendicular magnetic recording medium includes: a substrate; a soft magnetic film formed on the substrate; a non-magnetic film including an amorphous interlayer formed on the soft magnetic film and made from a metallic material selected from terbium, gadolinium, dysprosium, tantalum, hafnium, and combinations thereof, a buffer layer formed on the amorphous interlayer and having a face-centered cubic structure, and a seed layer formed on the buffer layer and having a hexagonal crystal structure; and a granular magnetic recording film formed on the seed layer.

Growing community of inventors

Hsinchu, Taiwan

Chih-Huang Lai