Applied Materials, Inc.

Lam Research Corporation

Chih-Hsun Hsu

Vijay D Parkhe

Shahid Rauf

Tza-Jing Gung

Michael D Willwerth

Ankur Agarwal

Mark Naoshi Kawaguchi

Benjamin Schwarz

Zhiqiang Guo

Dan Zhang

Himanshu Chokshi

Shih-Chung Kon

Stephen Whitten

Gnanamani Amburose

Andrew Stratton Bravo

Serge Kosche

Thorsten B Lill

Rongjun Wang

Yixiong Yang

Yu Lei

Meihua Shen

Xiaoxiong Yuan

Sahil Patel

Yi Xu

Wei Lei

Cong Trinh

Aixi Zhang

Shiyu Yue

Xingyao Gao

Devi Raghavee Veerappan

Ju Hyun Oh

Abulaiti Hairisha

Peiyu Zhang

Borui Xia

A method of selective metal removal via gradient oxidation for a gap-fill includes performing process cycles, each process cycle including placing a wafer having a semiconductor structure thereon into a first processing station, the semiconductor structure including a dielectric layer patterned with a feature formed therein and a seed layer formed on sidewalls and a bottom surface of the feature and a top surface of the dielectric layer, performing a reduction process on the wafer in the first processing station, performing a gradient oxidation process on the wafer in the second processing station, performing a gradient etch process on the wafer in the third processing station, and performing the gradient etch process on the wafer in the fourth processing station, wherein the first, second, third, and fourth processing stations are located in an interior volume of a processing chamber.

One chamber multi-station selective metal removal

A dual ion filter is arranged between upper and lower chambers of a substrate processing system. The dual ion filter includes upper and lower filters. The upper filter includes a first plurality of through holes configured to filter ions from a plasma in the upper chamber. The lower filter includes a second plurality of through holes configured to control plasma uniformity in the lower chamber. A diameter of the first plurality of through holes of the upper filter is less than a diameter of the second plurality of through holes of the lower filter. A number of the first plurality of through holes of the upper filter is greater than a number of the second plurality of through holes of the lower filter.

Substrate processing system including dual ion filter for downstream plasma

Gas diffuser

A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.

Electrostatic chucks with variable pixelated magnetic field are described. For example, an electrostatic chuck (ESC) includes a ceramic plate having a front surface and a back surface, the front surface for supporting a wafer or substrate. A base is coupled to the back surface of the ceramic plate. A plurality of electromagnets is disposed in the base, the plurality of electromagnets configured to provide pixelated magnetic field tuning capability for the ESC.

Electrostatic chuck with variable pixelated magnetic field

A method for selectively etching silicon oxide is provided. A surface reaction phase is provided comprising flowing a surface reaction gas comprising hydrogen, nitrogen and fluorine containing components to form silicon oxide into a compound comprising silicon, hydrogen, nitrogen, and fluorine, forming the surface reaction gas into a plasma, and stopping the flow of the surface reaction gas. The surface is wet treated to remove the compound.

Residue free oxide etch

Growing community of inventors

Campbell, CA, United States of America

Chih-Hsun Hsu