Industrial Technology Research Institute

Walsin Lihwa Corporation

Chih-Hsuen Chou

Yi-Keng Fu

Chia-Lung Tsai

Hung-Tse Chen

A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element&#x2014;may have a peak from 3E/cmto 1E/cmat an interface between the first-type doped GaN substrate and the first-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer. Other LEDs are also provided.

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Taipei, Taiwan

Chih-Hsuen Chou