E Ink Holdings Inc.

Chih-Hsuan Wang

Chia-Chun Yeh

Ted-Hong Shinn

Henry Wang

Xue-Hung Tsai

A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.

Metal oxide thin film transistor

A thin file transistor includes a gate electrode, a source electrode, a drain electrode, a gate-insulating layer, and an oxide semiconductor layer. The oxide semiconductor layer includes indium-gallium-zinc oxide with a formula of InGaZnO, in which x, y and z satisfy the following formulas 1.5&#x2266;(y/x)&#x2266;2 and 1.5&#x2266;(y/z)&#x2266;2. The gate-insulating layer is positioned between the gate electrode and the oxide semiconductor layer. The source electrode and the drain electrode are respectively connected to two different sides of the oxide semiconductor layer.

Thin film transistor

Disclosed herein is a thin film transistor. The thin film transistor is characterized in having a source interconnect layer and a drain interconnect layer. The source electrode and the drain electrode are respectively disposed above and in contact with the source interconnect layer and the drain interconnect layer. The semiconductor layer is in contact with both the source interconnect layer and the drain interconnect layer, but is not in contact with the source electrode and the drain electrode.

Thin-film transistor and method for manufacturing the same

An electric apparatus including a display and a process unit is provided. The display has an active area and a peripheral area. The display panel including an active device array substrate, an opposite substrate opposite to the active device array substrate and a display medium between the active device array substrate and the opposite substrate. The active device array substrate has a plurality of active devices disposed in the active area and a humidity sensor disposed in the peripheral area. The humidity sensor is a thin film transistor having a metal oxide semiconductor layer. The process unit is electrically connected to the humidity sensor. The process unit calculates a humidity value according to a sensing current from the humidity sensor.

Humidity sensing function for a display device

An active device is disposed on a substrate. The active device includes a metal layer, a semiconductor channel layer, an insulating layer, a source and a drain. The metal layer has a metal oxide surface away from the substrate. The insulating layer is disposed between the metal layer and the semiconductor channel layer. The source and the drain are disposed at one side of the semiconductor channel layer. A portion of the semiconductor channel layer is exposed between the source and the drain. An orthogonal projection of the metal layer on the substrate at least covers an orthogonal projection of the portion of the semiconductor channel layer exposed by the source and the drain on the substrate.

Growing community of inventors

Hsinchu, Taiwan

Chih-Hsuan Wang