Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Hsuan Cheng

Yu-Ming Lin

Chung-Te Lin

Meng-Han Lin

Feng-Cheng Yang

Han-Jong Chia

Sheng-Chen Wang

Feng-Ching Chu

Chieh-Fang Chen

Chieh-Yi Shen

A method for forming a semiconductor memory structure is provided. The method includes forming a stack over a substrate, and the stack includes first dielectric layers and second dielectric layers vertically alternately arranged. The method also includes forming first dielectric pillars through the stack, and etching the stack to form first trenches. Sidewalls of the first dielectric pillars are exposed from the first trenches. The method also includes removing the first dielectric pillars to form through holes, removing the second dielectric layers of the stack to form gaps between the first dielectric layers, and forming first conductive lines in the gaps.

Method for forming a 3-D semiconductor memory structure comprising horizontal and vertical conductive lines

Growing community of inventors

Hsinchu, Taiwan

Chih-Hsuan Cheng