Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Hsiung Lee

Yang-Tung Fan

San-De Tzu

Ching-Sen Kuo

Yu-Kung Hsiao

Fu-Tien Weng

Yi-Chuan Lo

Chuan-Chieh Huang

Hsun-Peng Lin

Zin-Chein Wei

Gwo Yuh Shiau

Tsung-Hou Lee

Yang Tung Fan

Fu-Tein Wung

A new method is provided for the creation of densely patterned interconnect lines. As a first step of the invention, the mask layout is modified such that the ratio of line width (L) to line spacing (S) is sharply decreased. The line pattern that is created using this mask reflects the same sharp reduction in the ratio L/S. The width of the thus created lines is, as a second step of the invention, increased by the process of thermal flow while the spacing between the lines is concurrently decreased by the same amount.

Enhance the process window of memory cell line/space dense pattern in sub-wavelength process

A method of fabricating doped polysilicon structures comprising the following steps. A substrate is provided and an undoped polysilicon layer is formed over the substrate. The undoped polysilicon layer is patterned to form at least one undoped polysilicon structure within an N area and at least one undoped polysilicon structure within a P area. The at least one undoped polysilicon structure within the N area is masked, leaving exposed an upper portion of the other at least one undoped polysilicon structure within the P area. The exposed at least one undoped polysilicon structure within the P area is doped to form a P-doped polysilicon structure. An upper portion of the masked at least one undoped polysilicon structure within the N area is unmasked and exposed, and the P-doped polysilicon structure is masked. The exposed at least one undoped polysilicon structure within the N area is doped to form an N-doped polysilicon structure to complete fabrication of the doped polysilicon structures.

Process to define N/PMOS poly patterns

A method for forming an optoelectronic microelectronic fabrication and an optoelectronic microelectronic fabrication fabricated in accord with the method. There is first provided a substrate having at minimum a first photoactive region and a second photoactive region formed therein. There is then formed over the substrate a patterned first color filter layer registered with the first photoactive region. There is then formed upon the patterned first color filter layer a first optically transparent planarizing encapsulant layer. There is then formed upon the first optically transparent planarizing encapsulant layer a patterned second color filter layer registered with the second photoactive region. Finally, there is then formed upon the patterned second color filter layer a second optically transparent planarizing encapsulant layer. The method contemplates an optoelectronic microelectronic fabrication fabricated in accord with the method.

Color filter image array optoelectronic microelectronic fabrication with three dimensional color filter layer and method for fabrication thereof

A method for forming an image array optoelectronic microelectronic fabrication, and the image array optoelectronic microelectronic fabrication formed employing the method. There is first provided a substrate having a photoactive region formed therein. There is then formed over the substrate a patterned microlens layer which functions to focus electromagnetic radiation with respect to the photoactive region of the substrate. The patterned microlens layer is formed of a first material having a first index of refraction. Finally, there is then formed conformally upon the patterned microlens layer an encapsulant layer, where the encapsulant layer is formed of a second material having a second index of refraction no greater than, and preferably less than, the first index of refraction of the first material. The method of the present invention contemplates an image array optoelectronic microelectronic fabrication formed employing the method of the present invention. The method is particularly useful for forming image array optoelectronic microelectronic fabrications with enhanced optical stability.

Image array optoelectronic microelectronic fabrication with enhanced optical stability and method for fabrication thereof

A method for forming an image array optoelectronic microelectronic fabrication. There is first provided a substrate. There is then formed at least in part over the substrate in a plane parallel to the substrate a bidirectional array of active image array optoelectronic microelectronic pixel elements. There is also formed over the substrate in the plane parallel to the substrate and contiguously extending from the bidirectional array of active image array optoelectronic microelectronic pixel elements an annular array of buffer image array optoelectronic microelectronic pixel elements. The annular array of buffer image array optoelectronic microelectronic pixel elements provides for uniform areal sensitivity of the bidirectional array of active image array optoelectronic microelectronic pixel elements.

Fabrication of uniform areal sensitivity image array

An method and apparatus for aligning a mask to a wafer for photolithographic processing steps which does not use optical alignment. Each wafer is provided a unique identification code, such as a bar code. As wafers are processed through photolithographic steps where optical detection of an alignment mark can be easily accomplished the alignment data for each wafer is stored in a memory unit. At the next photolithographic step a detector reads the identification code and identifies the wafer being processed. The wafer identification is fed to a data processing unit which retrieves the alignment data for that wafer fro the memory unit. The data processing unit then feed alignment data to a mechanical controller which positions the wafer relative to the mask image being used in the photolithographic step.

Alignment method and apparatus using previous layer calculation data to

The present invention provides an apparatus and a method for cleaning a liquid dispensing nozzle that is utilized in semiconductor process machines by providing a cleaning solvent reservoir tank capable of receiving a dispensing nozzle and then flowing a cleaning solvent through the nozzle under pressure, and then purging through the dispensing nozzle with a processing fluid to later be utilized such that any residual cleaning solvent is purged out of the dispensing nozzle to prevent the possible back-flow or syphoning of the cleaning solvent into a processing fluid supply and the dilution of such processing fluid. The present invention apparatus is further equipped with a cleaning solvent buffer tank for holding and feeding a cleaning solvent to the reservoir tank such that the pressure in the reservoir tank can be suitably controlled.

Apparatus and method for cleaning a liquid dispensing nozzle

A new method of changing the surface property of a nitride film from hydrophobic to hydrophillic and thereby reducing nitride residue after photolithography is described. A pad oxide layer is provided on the surface of a semiconductor substrate. A nitride layer is deposited overlying the pad oxide layer. Thereafter, the surface of the nitride layer is cleaned wherein the surface is changed from hydrophobic to hydrophillic. The nitride layer is coated with a photoresist film which is developed to leave an opening where the field oxidation region is to be formed. The nitride layer and pad oxide layer are etched away where they are not covered by the photoresist film to expose a portion of the semiconductor substrate. The exposed portion of the semiconductor substrate is oxidized to form a field oxidation region in the fabrication of an integrated circuit.

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Hsin-Chu, Taiwan

Chih-Hsiung Lee