Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-hsin Ko

Clement Hsingjen Wann

Chia-Ming Hsu

I-Sheng Chen

Yi-Jing Lee

Da-Wen Lin

Kuang-Hsin Chen

Ya-Yun Cheng

Hau-Yu Lin

Yi-Jing Li

Present disclosure provides a semiconductor structure, including a semiconductor fin having a first portion and a second portion over the first portion, a first conductive region abutting a first lateral surface of the first portion and a first lateral surface of the second portion, a metal gate having a bottom portion and an upper portion, the bottom portion being between the first portion and the second portion of the semiconductor fin, and the upper portion being over the second portion of the semiconductor fin, and a first spacer between the bottom portion of the metal gate and the first conductive region. A method for manufacturing the semiconductor structure described herein is also provided.

Semiconductor structure having fin with all around gate

A method includes: providing a first gate electrode over the substrate; forming a first pair of spacers on two sides of the first gate electrode; removing the first gate electrode to form a first trench between the first pair of spacers; depositing a dielectric layer in the first trench; depositing a first layer over the dielectric layer; removing the first layer from the first trench; and depositing a work function layer over the dielectric layer in the first trench.

Method of metal gate formation and structures formed by the same

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KAOHSIUNG COUNTY, Taiwan

Chih-hsin Ko