Macronix International Co., Ltd.

Chih-Hsien Lo

Kuang-Chao Chen

Chin-Ta Su

Chin-Tsan Yeh

A method of forming a non-volatile memory cell is provided. The method comprises: (a) providing a substrate; (b) forming a stacking structure on the substrate, the stacking structure at least comprising an oxide-nitride-oxide layer (ONO layer) and a polysilicon layer thereon; (c) patterning the stacking structure to form a plurality of separated stacking units, each two stacking units having an aperture therebetween; (d) forming a source region and a drain region buried in the substrate at two sides of the each stacking unit; (e) forming an oxide layer in the aperture and over the stacking units; and (f) performing a chemical mechanical polishing (CMP) process to remove the oxide layer over the stacking units and outside the aperture.

Growing community of inventors

Hsinchu County, Taiwan

Chih-Hsien Lo