Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Winbond Electronics Corporation

Novatek Microelectronics Corp.

Chih-Hsiang Chang

Wen-Ting Chu

Kuo-Chi Tu

Sheng-Hung Shih

Tzu-Yu Chen

Fu-Chen Chang

Ching-Yuan Yang

Chih-Hao Chang

Chien-Hsun Wang

Yu Chi Lee

Chih Chieh Yeh

Jeff J Xu

Nai-Chen Cheng

Cheng-Yuan Tsai

Yu-Wen Liao

Hung-Wen Su

Hsia-Wei Chen

Neng-Kuo Chen

Chih-Hung Chen

Chih-Chien Chi

Pei-Hsuan Lee

Jung-Mao Lin

Kuo-Hwa Tzeng

Yen-Chun Lin

Jeffrey Junhao Xu

Chi-Feng Lin

Chih-Hung Pan

Shu-Cheng Chin

Ming-Yuan Gao

Hsin-Ying Peng

Chen-Yi Niu

Hua-Shan Hu

A memory device includes a bottom electrode, a buffer element, a metal-containing oxide portion, a resistance switch element, and a top electrode. The buffer element is over the bottom electrode. The metal-containing oxide portion is over the buffer element, in which the metal-containing oxide portion has a same metal material as that of the buffer element. The resistance switch element is over the metal-containing oxide portion. The top electrode is over the resistance switch element.

Memory device with bottom electrode

In some embodiments, the present disclosure relates to a method of forming an integrated chip including forming a ferroelectric layer over a bottom electrode layer, forming a top electrode layer over the ferroelectric layer, performing a first removal process to remove peripheral portions of the bottom electrode layer, the ferroelectric layer, and the top electrode layer, and performing a second removal process using a second etch that is selective to the bottom electrode layer and the top electrode layer to remove portions of the bottom electrode layer and the top electrode layer, so that after the second removal process the ferroelectric layer has a surface that protrudes past a surface of the bottom electrode layer and the top electrode layer.

FeRAM MFM structure with selective electrode etch

A method of manufacturing an interconnect structure includes forming an opening through a dielectric layer. The opening exposes a top surface of a first conductive feature. The method further includes forming a barrier layer on sidewalls of the opening, passivating the exposed top surface of the first conductive feature with a treatment process, forming a liner layer over the barrier layer, and filling the opening with a conductive material. The liner layer may include ruthenium.

Method of forming interconnect structure having a barrier layer

In an embodiment, a structure includes one or more first transistors in a first region of a device, the one or more first transistors supporting a memory access function of the device. The structure includes one or more ferroelectric random access memory (FeRAM) capacitors in a first inter-metal dielectric (IMD) layer over the one or more first transistors in the first region. The structure also includes one or more metal-ferroelectric insulator-metal (MFM) decoupling capacitors in the first IMD layer in a second region of the device. The MFM capacitors may include two or more capacitors coupled in series to act as a voltage divider.

FeRAM decoupling capacitor

A voltage-controlled oscillator device includes first and second voltage-controlled oscillators, a first switch group including two first switches, and a second switch group including two second switches. The first voltage-controlled oscillator includes a first inductor group, a first negative resistance circuit and a first voltage output terminal group. The second voltage-controlled oscillator includes a second inductor group, a second negative resistance circuit and a second voltage output terminal group. For the first switch group, first control terminals are electrically connected to the first voltage output terminal group, first input terminals are electrically connected to the second voltage output terminal group, first output terminals are electrically connected. For the second switch group, second control terminals are electrically connected to the second voltage output terminal group, second input terminals are electrically connected to the first voltage output terminal group, second output terminals are electrically connected.

Voltage-controlled oscillator device

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a bottom electrode disposed over a substrate. A data storage structure is disposed on the bottom electrode and is configured to store a data state. A top electrode is disposed on the data storage structure. The top electrode has interior surfaces defining a recess within an upper surface of the top electrode. A masking layer contacts a bottom of the recess and extends to over the upper surface of the top electrode. An interconnect extends through the masking layer and to the top electrode. The interconnect is directly over the upper surface of the top electrode.

Memory cell having a top electrode interconnect arranged laterally from a recess

Interconnect structure and method of forming thereof

A method for fabricating a memory device is provided. The method includes forming a bottom electrode layer over a substrate; forming a buffer layer over the bottom electrode layer; performing a surface treatment to a top surface of the buffer layer; depositing a resistance switch layer over the top surface of the buffer layer after performing the surface treatment; forming a top electrode over the resistance switch layer; and patterning the resistance switch layer into a resistance switch element below the top electrode.

Memory device and method for fabricating the same

In some embodiments, the present disclosure relates to an integrated chip including one or more lower interconnect layers arranged within one or more stacked inter-layer dielectric layers over a substrate. A bottom electrode is disposed over the one or more interconnect layers, and a top electrode is disposed over the bottom electrode. A ferroelectric layer is disposed between and contacts a first surface of the bottom electrode and a second surface of the top electrode. The ferroelectric layer includes a protrusion that extends past outer surfaces of the top electrode and the bottom electrode along a first direction that is perpendicular to a second direction that is normal to the first surface. The protrusion is confined between lines that extend along the first and second surface.

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a plurality of lower interconnect layers disposed within a lower dielectric structure over a substrate. A lower insulating structure is over the lower dielectric structure and has sidewalls extending through the lower insulating structure. A bottom electrode is arranged along the sidewalls and an upper surface of the lower insulating structure. The upper surface of the lower insulating structure extends past outermost sidewalls of the bottom electrode. A data storage structure is disposed on the bottom electrode and is configured to store a data state. A top electrode is disposed on the data storage structure. The bottom electrode has interior sidewalls coupled to a horizontally extending surface to define a recess within an upper surface of the bottom electrode. The horizontally extending surface is below the upper surface of the lower insulating structure.

Memory cell having top and bottom electrodes defining recesses

An embodiment of a method for forming a transistor that includes providing a semiconductor substrate having a source/drain region is provided where a first SiGe layer is formed over the source/drain region. A thermal oxidation is performed to convert a top portion of the first SiGe layer to an oxide layer and a bottom portion of the first SiGe layer to a second SiGe layer. A thermal diffusion process is performed after the thermal oxidation is performed to form a SiGe area from the second SiGe layer. The SiGe area has a higher Ge concentration than the first SiGe layer.

Integrated circuit transistor structure with high germanium concentration SiGe stressor

An oscillator configured to generate an oscillation signal is provided. The oscillator includes a transistor pair and a cross-coupled transistor pair. The transistor pair is coupled to a first current source and has a first transconductance. The first transconductance is changed in response to a current value of the first current source. The cross-coupled transistor pair is coupled to a second current source and has a second transconductance. The second transconductance is changed in response to a current value of second current source. The transistor pair and the cross-coupled transistor pair are mutually coupled by a plurality of inductors. A frequency of the oscillation signal is determined according to the first transconductance and the second transconductance. Furthermore, a clock generator and a method for generating a clock signal thereof are also provided.

Oscillator, a clock generator and a method for generating a clock signal

A memory apparatus including a memory cell array, a register unit and a command generator is provided. The memory cell array includes a plurality of memory cells. The register unit is configured to record a plurality of user-defined information. The command generator receives a user-defined command and operates at least two memory operations on the memory cell array according to the received user-defined command and the user-defined information. The user-defined information is generated according to the at least two memory operations. Furthermore, an operating method of a memory apparatus is also provided.

Memory apparatus for executing multiple memory operations by one command and operating method thereof

Growing community of inventors

Taichung, Taiwan

Chih-Hsiang Chang