Subtron Technology Co., Ltd.

Chih-Hong Chuang

Tzyy-Jang Tseng

Chin-Sheng Wang

Tzu-Wei Huang

Chien-Hung Wu

A temporary package substrate includes a first copper layer, a second copper layer, a third copper layer, a first plating copper layer, a second plating copper layer, a third plating copper layer, a first dielectric layer, a second dielectric layer and two circuit structures. The second copper layer is located between the first and the third copper layers, and edges of the second copper layer are retracted a distance compared to edges of the first copper layer and edges of the third copper layer. The first and the second dielectric layers completely encapsulate the edges of the second copper layer and the edges of the second plating copper layer. Each of the circuit structures includes at least two patterned circuit layers, an insulation layer located between the patterned circuit layers, and a plurality of conductive through hole structures penetrating the insulation layer and electrically connected with the patterned circuit layers.

Package substrate and manufacturing method thereof

A method of manufacturing a package substrate is provided. A first copper layer and a first plating copper layer formed thereon, a first dielectric layer, a second copper layer and a second plating copper layer formed thereon, a second dielectric layer, a third copper layer and a third plating copper layer formed thereon are provided and laminated, so that the first and the second dielectric layers encapsulate edges of the second copper layer and the second plating copper layer to form a temporary carrier. Two circuit structures are formed on two opposite surfaces of the temporary carrier. The temporary carrier and the circuit structures are cut to expose the edges of the second copper layer and the second plating copper layer, and separated along the exposed edges of the second copper layer and the second plating copper layer to form two package substrates independent from each other.

A manufacturing method of a circuit substrate includes the following steps. The peripheries of two metal layers are bonded to form a sealed area. At least a through hole passing through the sealed area is formed. Two insulating layers are formed on the two metal layers. Two conductive layers are formed on the two insulating layers. The two insulating layers and the two conductive layers are laminated to the two metal layers bonded to each other, wherein the metal layers are embedded between the two insulating layers, and the two insulating layers fill into the through hole. The sealed area of the two metal layers is separated to form two separated circuit substrates. Therefore, the thinner substrate can be operated in the following steps, such as patterning process or plating process. In addition, the method may be extended to manufacture the circuit substrate with odd-numbered layer or even-numbered layer.

Manufacturing method of circuit substrate

A fabricating method of a semiconductor package structure is provided. A dielectric layer having a first surface and a second surface is provided. A patterned metal layer has been formed on the first surface of the dielectric layer. An opening going through the first and the second surfaces is formed. A carrier having a third surface and a fourth surface is formed at the second surface. A portion of the third surface is exposed by the opening of the dielectric layer. A semiconductor die having a joining surface and a side-surface is joined in the opening. At least a through hole going through the third and the fourth surfaces is formed. A metal layer having at least a heat conductive post extending from the fourth surface of the carrier to the through hole and disposed in the through hole and a containing cavity is formed on the fourth surface.

Fabricating method of semiconductor package structure

A manufacturing method of package carrier is provided. A first copper foil layer, a second copper foil layer on the first foil layer, a third copper foil layer and a fourth foil layer on the third foil layer are provided. The second copper foil layer is partially bonded the fourth copper foil layer by an adhesive gel so as to form a substrate of which the peripheral region is glued and the effective region is not glued. Therefore, the thinner substrate can be used in the following steps, such as patterning process or plating process. In addition, the substrate can be extended be the package carrier structure with odd-numbered layer or even-numbered layer.

Manufacturing method of package carrier

A semiconductor package structure includes a dielectric layer, a patterned metal layer, a carrier, a metal layer and a semiconductor die. The dielectric layer has a first surface, a second surface and an opening. The patterned metal layer is disposed on the first surface. The carrier is disposed at the second surface and has a third surface, a fourth surface and at least a through hole. A portion of the third surface and the through hole are exposed by the opening. The metal layer is disposed on the fourth surface and has a containing cavity and at least a heat conductive post extending from the fourth surface and disposed in the through hole. An end of the heat conductive post protrudes away from the third surface, and the containing cavity is located on the end of the heat conductive post. The semiconductor die is located in the containing cavity.

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Hsinchu, Taiwan

Chih-Hong Chuang