Innolux Corporation

Innocare Optoelectronics Corporation

Innocom Technology(shenzhen) Co., Ltd.

National Yang Ming Chiao Tung University

Chimei Innolux Corporation

Chih-Hao Wu

Hsin-Hung Lin

Zhi-Hong Wang

Wen Chien Lin

Chao-Hsiang Wang

Yi-Ching Chen

Jung-Fang Chang

Chih-Ying Wang

Li-Wei Sung

Ya-Hsiang Tai

Cheng-Hsu Chou

Yu-Lun Hsieh

Chin-Chi Chen

Cheng Che Tu

Jyun-Hao Syu

Provided are a sensing device and a manufacturing method thereof. The sensing device includes a substrate, a first electrode and a sensing layer. The first electrode is disposed on the substrate. The sensing layer is disposed on the first electrode and has a first surface adjacent to the first electrode. The first electrode has a length smaller than that of the first surface. The manufacturing method of the sensing device includes the following. A substrate is provided. A sensing layer is formed on the substrate. A first electrode is formed on the substrate so that the first electrode is disposed between the sensing layer and the substrate. The sensing layer has a first surface adjacent to the first electrode. The first electrode has a length smaller than that of the first surface of the sensing layer.

Sensing device and manufacturing method thereof

An X-ray device, including a sensor panel and a flexible scintillator structure disposed on the sensor panel, is provided. A manufacturing method of the X-ray device is also provided.

Manufacturing method of X-ray device

An X ray device, including an array substrate, a scintillator layer, a first adhesion layer, a function film, and a second adhesion layer, is provided. The scintillator layer is disposed on the array substrate. The first adhesion layer is disposed between the scintillator layer and the array substrate. The function film is disposed on the array substrate. The second adhesion layer is disposed between the function film and the array substrate. The function film covers the scintillator layer.

X ray device and manufacturing method thereof

A circuit for sensing an X-ray including a switching element, a storage element, a sensing element and a branching element. The storage element electrically coupled to the switching element. The sensing element electrically coupled to the switching element. The branching element electrically coupled between the storage element and the sensing element.

Circuit for sensing X-ray

A radiation-sensing device is provided. The radiation-sensing device includes a substrate, a first scintillator layer, a second scintillator layer, and an array layer. The first scintillator is disposed on a first side of the substrate, and includes a plurality of first blocking walls and a plurality of first scintillator elements. The plurality of first scintillator elements are located between the plurality of first blocking walls. The second scintillator layer is disposed on a second side of the substrate, and the second side is opposite to the first side. The array layer is located between the first scintillator layer and the second scintillator layer, and has a plurality of photosensitive elements. In addition, a projection of at least one of the plurality of first blocking walls on the substrate overlaps with a projection of at least one of the plurality of photosensitive elements on the substrate.

Radiation-sensing device

An X-ray device including a sensing panel is provided. The sensing panel includes a first pixel and a second pixel. The second pixel is disposed adjacent to the first pixel in a top view direction. The first pixel includes a first photoelectric conversion layer. The second pixel includes a second photoelectric conversion layer. The first photoelectric conversion layer and the second photoelectric conversion layer belong to different layers.

X-ray device

A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

Radiation sensing device

X-ray device and manufacturing method thereof

An X-ray device is provided, which includes a flexible substrate, a driver integrated circuit, and a scintillator layer. The flexible substrate includes an array portion and an extension portion. The driver integrated circuit is disposed on the flexible substrate. The scintillator layer is disposed on the flexible substrate.

The disclosure provides a processing circuit adapted to read out a sensing voltage of an X-ray sensor and a signal processing method of a sampling circuit. The processing circuit includes an amplifier and the sampling circuit. An inverting input terminal of the amplifier is coupled to the X-ray sensor. The sampling circuit is coupled to an output terminal of the amplifier. The sampling circuit obtains a first voltage, a second voltage, and a sampling voltage of the X-ray sensor in different periods. The sampling voltage is between the first voltage and the second voltage. In the readout period, the sampling circuit subtracts the second voltage from the sampling voltage to obtain a third voltage, subtracts the second voltage from the first voltage to obtain a fourth voltage, and divides the third voltage by the fourth voltage to read out the sensing voltage of the X-ray sensor.

Processing circuit and signal processing method of sampling circuit

Radiation sensing device and operating method thereof

A light detection device includes a first gate line, a second gate line adjacent to the first gate line, a first switching unit, a second switching unit, and a readout circuit. The first switching unit includes a first gate electrode connected to the first gate line, and a first drain electrode electrically connected to a light sensing unit. The second switching unit includes a second gate electrode connected to the second gate line, and a second drain electrode electrically connected to a light sensing unit. An operation method of the light detection device includes receiving a first readout signal and a second readout signal from the first switching unit and the second switching unit respectively by the readout circuit and calculating a difference between the first readout signal and the second readout signal for determining whether the light detection device is irradiated by detection light.

Light detection device and operating method thereof

A photodetecting device is provided. The photodetecting device includes an array substrate. The first scan line extends in a first direction. The first data line extends in a second direction, wherein first data line is crossed with the first scan line. The first electronic unit is electrically connected to the first scan line and the first data line. The second electronic unit is adjacent to the first electronic unit and is disposed along the first direction. The third electronic unit is adjacent to the first electronic unit and is disposed along the second direction. The common line transmits a signal to the first electronic unit, the second electronic unit and the third electronic unit. The common line is disposed between the first electronic unit and the second electronic unit, or between the first electronic unit and the third electronic unit.

Photodetecting device

A detecting device is provided. The detecting device includes a substrate, at least one transistor, at least one detecting element, and a scintillator layer. The transistor is disposed on the substrate. The detecting element is disposed on the transistor and electrically connects to the transistor. The detecting element includes a first electrode layer, a semiconductor layer, and a second electrode layer. The semiconductor layer is disposed on the first electrode layer, and the second electrode layer is disposed on the semiconductor layer. The scintillator layer is disposed on one side of the substrate, wherein at least one corner area of the scintillator layer has a curved structure or a chamfered structure.

Growing community of inventors

Miao-Li County, Taiwan

Chih-Hao Wu