Genesis Photonics Inc.

Chih-Feng Lu

Chi-Feng Huang

Hsin-Chiao Fang

Chi-Hao Cheng

Cheng-Hsueh Lu

A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlGaN, wherein 0&#x2264;x&#x2264;1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5&#xd7;10cmand carbon having a concentration greater than 5&#xd7;10cm. A chemical formula of the second AlGaN buffer layer is AlGaN, wherein 0&#x2264;y&#x2264;1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.

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Tainan, Taiwan

Chih-Feng Lu