National Taiwan University

Tsinghua University

Compal Electronics, Inc.

National Science Council

National Applied Research Laboratories

Chih-Chung Yang

Che-Hao Liao

Horng-Shyang Chen

Chih-Yen Chen

Cheng-Hung Lin

Cheng-Kuang Lee

Dong-Ming Yeh

Yu-Feng Yao

Chia-Ying Su

Yu-Hsuan Lin

Kuo-Cheng Huang

Tai-Shan Liao

Chun-Sheng Chen

Hsin-Ming Chen

Chun-han Lin

Hsin-Hung Shen

Hsiang-Chieh Lee

Jian-Jang Huang

Cheng-Yen Chen

Hung-Yu Tseng

Chi-Feng Huang

Tsung-Yi Tang

Yen-Cheng Lu

Jeng-Jie Huang

Yen-Ju Chiang

Li-Karn Wang

Shao-Ying Ting

Ding-Wei Huang

Chih-Feng Lu

Wen-Ming Chang

Cheng-Wen Wu

Hao-Tsung Chen

Wei-Fang Chen

Yung-Sheng Chen

Chiung-Ting Wu

Wen-Fung Liu

Charng-Gan Tu

Ting-Ta Chi

Chieh Hsieh

Meng-Tsan Tsai

Yih-Ming Wang

Chun-Pin Chiang

A method for determining if a wire guide roller having a plurality of V-shaped grooves, each having a copper line thereon, arranged column-by-column on a periphery direction thereof is failed after slicing a plurality of wafers is disclosed. Based on the disclosed technical means, the efficacy may be achieved that a damage situation may be automatically examined and notified to maintain a yield in the slicing process in an online high speed environment.

Damage determination of V-shaped groove guide on roller V-shaped

A semiconductor light-emitting device including a substrate, a first-type doped semiconductor structure, a light-emitting layer, and a second-type doped semiconductor layer is provided. The first-type doped semiconductor structure is located on the substrate and includes a base and multi-section rod structures extended upward from the base. Each multi-section rod structure includes rods and at least one connecting portion. The connecting portion connects adjacent rods along a first direction, wherein the first direction is perpendicular to the base and points to the connecting portion from the base. Cross-section areas of different rods on a reference plane parallel to the substrate are different, and cross-section areas of the connecting portion on the reference plane decrease along the first direction. The light-emitting layer is located on sidewalls of the rods. The second-type doped semiconductor layer is located on the light-emitting layer. A manufacturing method of the semiconductor light-emitting device is also provided.

Multi-section rod semiconductor light-emitting device and manufacturing method thereof

The invention is directed to a method for forming a nitride on a silicon substrate. In the method of the present invention, a silicon substrate is provided and a buffer layer is formed on the silicon substrate. The formation of the buffer layer includes a multi-level temperature modulation process having a plurality temperature levels and a plurality of temperature modulations. For each of the temperature modulations, the temperature is gradually decreased. A nitride is formed on the buffer layer.

Fabrication method of nitride forming on silicon substrate

A semiconductor device including a Si (110) substrate, a buffer layer, a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer is provided. The Si (110) substrate has a plurality of trenches. Each trench at least extends along a first direction, and the first direction is parallel to a &#x3c;1-10&#x3e; crystal direction of the Si (110) substrate. The buffer layer is located on the Si (110) substrate and exposes the trenches. The first type doped semiconductor layer is located on the buffer layer and covers the trenches. The light-emitting layer is located on the first type doped semiconductor layer. The second type doped semiconductor layer is located on the light-emitting layer. A fabrication method of a semiconductor device is also provided.

Semiconductor device having trench and fabrication method thereof

A debugging device for performing a debugging process through an electronic device external connector system is provided. The debugging device performs the debugging process to a target system, and the device comprises a first external connector, a switch, and a debugging module. The first external connector is connected to the external port of the target system. The switch is connected to the first external connector, and the switch chooses to activate the debugging process. The debugging module is connected to the switch, and the debugging module receives a universal asynchronous receiver/transmitter (UART) signal provided by the target system.

Debugging device and method for performing a debugging process to a target system

A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a first type doped semiconductor structure, a light-emitting layer, a second type doped semiconductor layer, a first conductive layer and a dielectric layer. The first type doped semiconductor structure includes a base and a plurality of columns extending outward from the base. Each of the columns includes a top surface and a plurality of sidewall surfaces. The light-emitting layer is disposed on the sidewall surfaces and the top surface, wherein the surface area of the light-emitting layer gradually changes from one side adjacent to the columns to a side away from the columns. The dielectric layer exposes the first conductive layer locating on the top surface of each of the columns, wherein the dielectric layer includes at least one of a plurality of quantum dots, phosphors, and metal nanoparticles.

Semiconductor light-emitting device and manufacturing method thereof

A fabrication method of nanoparticles is provided. A substrate having a plurality of pillar structures is provided and then a plurality of ring structures is formed to surround the plurality of the pillar structures. The inner wall of each ring structure surrounds the sidewall of each pillar structure. A portion of each pillar structure is removed to reduce the height of each pillar structure and to expose the inner wall of each ring structure. The ring structures are separated from the pillar structures to form a plurality of nanoparticles. Surface modifications are applied to the ring structures before the ring structures are separated from the pillar structures on the substrate.

Fabrication method of nanoparticle

A mirror image suppression method adapted to an optical coherence tomography (OCT) system is provided. The mirror image suppression method includes the following steps: obtaining a tomography image of an object to be tested by using the OCT system; calculating one real image signal obtained from an nspecific-mode scan for a specific pixel of the tomography image based on image signals obtained from an (n&#x2212;1)and the nspecific-mode scans; obtaining one real image signal of each of a plurality of pixels in the tomography image based on the calculation in the step of calculating the one real image signal; and reconstructing the tomography image based on the real image signal of each of the pixels obtained in the step of obtaining the one real image signal to suppress mirror image signals of the tomography image.

Mirror image suppression method

The invention provides a method for forming a light emitting device. A first substrate is provided. A plurality of patterned masks is formed on the first substrate, or on a semiconductor epitaxial layer grown on the first substrate, or the first substrate is etched to form a plurality of trenches, followed by performing an epitaxial lateral overgrowth process to grow an epitaxy layer over the first substrate. A light emitting structure is formed on the epitaxy layer. A first electrode layer is formed on the light emitting structure. The light emitting structure is wafer bonded to a second substrate. A photoelectrochemical etching process is performed to lift off the first substrate from the epitaxy layer.

Method for forming light emitting device

A method for forming a periodic structure is disclosed. A structural layer and an optical modulation element are provided. A light is emitted to pass through the optical modulation element to irradiate interference strips on the structural layer. A photoelectrochemical etching (PEC) is performed to form the periodic structure according the interference strips irradiated on the structural layer.

Method for forming periodic structure

A method for analyzing mucosa structure with optical coherence tomography (OCT) is provided, and includes: (a) scanning a mucosa sample with optical coherence tomography; (b) choosing a lateral range from a two- or three-dimensional OCT image and analyzing all the A-scan intensity profiles in the lateral range; (c) calculating three indicators in each A-scan intensity profile, including the standard deviation for a certain depth range below the sample surface, the exponential decay constant of the spatial-frequency spectrum and the epithelium thickness under the condition that the basement membrane is identifiable; and (d) using the three indicators of each A-scan intensity profile within the lateral range to analyze the mucosa structure.

Method for analyzing mucosa samples with optical coherence tomography

A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.

Method for controlling color contrast of a multi-wavelength light-emitting diode

The present invention provides a dual fiber Bragg grating strain sensor system, which comprises a broadband light source, a power reading unit, and a sensor unit having a first fiber Bragg grating and a second fiber Bragg grating placed adjacent to each other; wherein the broadband light reaches said sensor unit through said power reading unit, the light that corresponds to the intersection between the spectra of the two FBGs is backreflected and is detected by an optical power meter/detector at the detection port.

Dual fiber bragg grating strain sensor system

A reflectivity-tunable fiber reflector is disclosed. The Bragg reflectivity of the fiber grating is modulated by exciting the transverse vibration of the fiber through an acoustic wave. The excitation of the transverse vibration, leading to fiber grating tilting and fiber micro-bending, induces the coupling of the fiber core mode into cladding modes. This leads to the reduction of core-mode power and hence that of Bragg reflection. This mechanism is applied by this invention to control the reflectivity of a fiber optic Bragg grating after fabrication. The fiber reflector is suitable for fiber-compatible acousto-optical switching.

Reflectivity-tunable fiber optic reflector

Growing community of inventors

Taipei, Taiwan

Chih-Chung Yang