Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Chung Lai

Ji-Feng Ying

Tsann Lin

Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.

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Hsin-Chu, Taiwan

Chih-Chung Lai