Au Optronics Corporation

Chih-Chun Yang

Chih-Hung Shih

Ming-Yuan Huang

Han-Tu Lin

Kuo-Lung Fang

Ta-Wen Liao

Chia-Chi Tsai

Chin-Yueh Liao

Hsiang-Chih Hsiao

Shiun-Chang Jan

Chienhung Chen

Hantu Lin

Chiajung Yang

A display panel includes a substrate having a display area and a blank area. The blank area includes at least one of a non-metal line region and a metal-line region. The non-metal line region includes a plurality of insulating patterns and a first conductive pattern layer formed on the substrate. The insulating patterns are isolated from each other by the first conductive pattern layer. The metal-line region includes an insulating multilayer formed on the substrate and a conductive pattern layer formed on the insulating multilayer. Several isolated zones are formed by the conductive pattern layer on the surface of the insulating multilayer.

Display panel and method for manufacturing the same

A semiconductor structure is provided. The semiconductor structure includes a substrate, a gate disposed thereon, an insulation layer disposed on the substrate and overlying the gate, a patterned semiconductor layer disposed on the insulation layer, a source and a drain disposed on the patterned semiconductor layer, a protective layer overlying the insulation layer, the source and the boundary of the drain to expose a portion of the drain, and a pixel electrode disposed on the substrate, overlying the protective layer overlying the boundary of the drain, electrically connected to the exposed drain.

Semiconductor structures

A liquid crystal display device having an improved aperture ratio and the manufacturing method thereof are provided. The liquid crystal display device has a storage capacitor with two patterned transparent conductive layers serving as two electrodes. Therefore the storage capacitor is pervious to light and the transparent area of the display device is enlarged so as to improve the aperture ratio.

Liquid crystal display device and the manufacturing method thereof

The invention provides a method for manufacturing an array substrate utilizing a laser ablation process. A conductive layer can be selectively patterned by the laser ablation process without a photo mask due to different adhesions between the conductive layer and other materials. The patterned conductive layer thus formed adjoins an inorganic passivation layer to provide a substantially continuous surface.

Array substrate and method for fabricating thereof

A method for manufacturing a pixel structure includes providing a substrate having an active device thereon and forming a dielectric layer covering the active device. The dielectric layer has a contact hole disposed over the active device. Next, a first photoresist layer is formed on the dielectric layer over the active device, and a transparent conductive layer is formed to cover a portion of the dielectric layer and the first photoresist layer. The transparent conductive layer is electrically connected to the active device via the contact hole. Besides, the transparent conductive layer is irradiated with use of a laser beam, and a portion of the transparent conductive layer on the first photoresist layer is removed, such that the other portion of the transparent conductive layer on the portion of the dielectric layer forms a pixel electrode. The first patterned photoresist layer is then removed.

Method for manufacturing pixel structure

A method for fabricating a pixel structure is disclosed. A substrate is provided. A first conductive layer is formed on the substrate, and a first shadow mask exposing a portion of the first conductive layer is disposed over the first conductive layer. Laser is used to irradiate the first conductive layer for removing the part of the first conductive layer and forming a gate. A gate dielectric layer is formed on the substrate to cover the gate. A channel layer is formed on the gate dielectric layer over the gate. A source and a drain are formed on the channel layer and respectively above both sides of the gate. A patterned passivation layer is formed to cover the channel layer and expose the drain. An electrode material layer is formed to cover the patterned passivation layer and the exposed drain.

Method for fabricating pixel structure

A method for fabricating a pixel structure includes following steps. First, a substrate is provided. Next, a first conductive layer is formed on the substrate. Next, a first shadow mask is disposed over the first conductive layer. Next, a laser is applied through the first shadow mask to irradiate the first conductive layer to form a gate. Next, a gate dielectric layer is formed on the substrate to cover the gate. After that, a channel layer, a source and a drain are simultaneously formed on the gate dielectric layer over the gate, wherein the gate, the channel layer, the source and the drain together form a thin film transistor. A patterned passivation layer is formed on the thin film transistor and the patterned passivation layer exposes a part of the drain. Furthermore, a pixel electrode electrically connecting to the drain is formed.

A method for manufacturing a pixel structure is provided. A gate and a gate insulating layer are sequentially formed on a substrate. A semiconductor layer and a second metal layer are sequentially formed on the gate insulating layer. The semiconductor layer and the second metal layer are patterned to form a channel layer, a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and drain are disposed on a portion of the channel layer. The gate, channel, source and drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain.

Array substrate

A method of fabricating a pixel structure includes first forming a first, a second, and a third dielectric layers over an active device and a substrate. Etching rates of the first and the third dielectric layers are lower than an etching rate of the second dielectric layer. A contact opening exposing a portion of the active device is formed in the third, the second, and the first dielectric layers. The third and the second dielectric layers are patterned to form a number of stacked structures. An electrode material layer is formed and fills the contact opening. The electrode material layer located on the stacked structures and the electrode material layer located on the first dielectric layer are separated. The stacked structures and the electrode material layer thereon are simultaneously removed to define a pixel electrode and to form at least an alignment slit in the pixel electrode.

Method of fabricating pixel structure

A method for fabricating a pixel structure using a laser ablation process is provided. This fabrication method forms a gate, a channel layer, a source, a drain, a passivation layer, and a pixel electrode sequentially by using a laser ablation process. Particularly, the fabrication method is not similar to a photolithography and etching process, so as to reduce the complicated photolithography and etching processes, such as spin coating process, soft-bake, hard-bake, exposure, developing, etching, and stripping. Therefore, the fabrication method simplifies the process and thus reduces the fabrication cost.

A method for manufacturing a pixel structure includes providing a substrate having an active device thereon and forming a dielectric layer covering the active device. Then, an uneven first photoresist layer having an opening is formed over the active device. After an etching process is implemented to form a contact hole in the dielectric layer through said opening, a thickness of the first photoresist layer is reduced so as to expose a portion of the dielectric layer. A transparent conductive layer covering the exposed dielectric layer and the remained first photoresist layer is formed and electrically connected to the active device via the contact hole. Thereafter, the transparent conductive layer on the remained first photoresist layer is removed, while the transparent conductive layer on the exposed dielectric layer forms a pixel electrode. Then, the remained first photoresist layer is removed. With fewer photomasks, the method reduces the manufacturing costs.

Growing community of inventors

Hsinchu, Taiwan

Chih-Chun Yang