Ememory Technology Inc.

Au Optronics Corporation

Chih-Chun Chen

Chih-Wei Chen

Cheng-Da Huang

Chun-Hung Lin

Wen-Hui Peng

Tsai-Chi Yeh

Chieh-Tse Lee

Ting-Shiun Huang

Sheng-Yun Hsu

A non-volatile memory cell includes a first select transistor, a first floating gate transistor, a second floating gate transistor and a second select transistor. The first select transistor is connected with a program source line and a program word line. The first floating gate transistor includes a floating gate. The first floating gate transistor is connected with the first select transistor and a program bit line. The second floating gate transistor includes a floating gate. The second floating gate transistor is connected with a read source line. The second select transistor is connected with the second floating gate transistor, the read word line and the read bit line. The floating gate of the second floating gate transistor is connected with the floating gate of the first floating gate transistor.

Non-volatile memory cell and non-volatile memory cell array

A self-biased sense amplification circuit includes a local bit line, a reset unit, a main bit lie, a pre-amplifier, a data line, a sample reference unit, and a sense amplifier. The local bit line receives a cell current generated by a memory cell during a sense operation. The reset unit resets the local bit line to a first system voltage during a sample operation. The pre-amplifier generates a read current on the main bit line according to a voltage of the local bit line during the sample operation and the sense operation. The data line is coupled to the main bit line. The sample reference unit generates a first reference current and a second reference current during the sample operation, and generates the first reference current during the sense operation. The sense amplifier senses a voltage of the data line.

Self-biased sense amplification circuit

A bandgap voltage reference circuit includes an amplifier, a voltage buffer, a first transistor, a first resistor, a second transistor, a second resistor, and a leakage current. The input terminals of the amplifier are coupled to a first reference node and a second reference node respectively. The voltage buffer is coupled to the output terminal of the amplifier for outputting a bandgap reference voltage. The first transistor is coupled to the first reference node, the second first resistor, and can receive the bandgap reference voltage. The second resistor is coupled to the first resistor and a system voltage terminal. The second transistor is coupled to the second reference node, the first resistor, and can receive the bandgap reference voltage. The leakage current compensation element is coupled to the second transistor and the system voltage terminal. A size of the first transistor is greater than the second transistor.

Bandgap voltage reference circuit capable of correcting voltage distortion

A sensing circuit includes a sensing stage. The sensing stage includes a voltage clamp, a P-type transistor and an N-type transistor. The voltage clamp receives a first power supply voltage and generates a second power supply voltage. The source terminal of the P-type transistor receives the second power supply voltage. The gate terminal of the P-type transistor receives a cell current from a selected circuit of a non-volatile memory. The drain terminal of the N-type transistor is connected with the drain terminal of the P-type transistor. The gate terminal of the N-type transistor receives a bias voltage. The source terminal of the N-type transistor receives a ground voltage. In a sensing period, the second power supply voltage from the voltage clamp is fixed and lower than the first power supply voltage.

Sensing circuit with voltage clamp for non-volatile memory

A power-up sequence protection circuit includes a first transistor, a second transistor, a third transistor, and a fourth transistor. First terminals of the first transistor, the second transistor, and the fourth transistor are coupled for receiving a program voltage. A control terminal of the third transistor is used for receiving a device voltage. A second terminal of the fourth transistor is used for outputting the program voltage when the fourth transistor is turned on. When the program voltage is unexpectedly powered up while the device voltage is not powered up, the first transistor is turned on, the second transistor is turned off, and the fourth transistor is turned off so as to block the program voltage outputted from the second terminal of the fourth transistor.

Power-up sequence protection circuit for avoiding unexpected power-up voltage

A self-timed reset pulse generator includes a flip-flop, a tracking block, and a tracking circuit. The flip-flop receives an input signal and a feedback signal and outputting a reset signal. The tracking block has replicating cells coupled in series and replicates a structure in an external device. The tracking block has a first terminal and a second terminal. The first terminal and the second terminal are taking from the tracking block at a same location or two different locations. The tracking circuit unit receives the reset signal and receives the first terminal and the second terminal for respectively discharging the tracking block at the first terminal and sensing a voltage level at the second terminal as triggered by the reset signal. A track-out signal serving as the feed back signal is output to the flip-flop when the voltage level is less than or equal to a threshold.

Self-timed reset pulse generator and memory device with self-timed reset pulse generator

The invention provides a non-volatile memory cell structure and non-volatile memory apparatus using the same. The non-volatile memory cell structure includes a substrate, first to three wells and first to three transistors. The first to three wells are disposed in the substrate, and the first to three transistors are respectively forming on the first to three wells. The first to third transistors are coupled in series. Wherein, a control end of the first transistor is floated, a control end of the second transistor receives a bias voltage, and a control end of the third transistor is coupled to a word line signal. Moreover, the third well and the second cell are in same type, and the type of the first well is complementary to a type of the third well.

Non-volatile memory cell structure and non-volatile memory apparatus using the same

A pixel array substrate includes a substrate having a display region and a non-display region, a pixel array in the display region, first and second lead lines, first pads in the non-display region, second pads in the non-display region and on a first insulating layer, and the first insulating layer. The first lead lines electrically connect the pixel array and extend from the display region to the non-display region. Each first pad electrically connects one corresponding first lead line. The first insulating layer covers the first lead lines and exposes the first pads. The second lead lines on the first insulating layer electrically connect the pixel array and extend from the display region to the non-display region. Each second pad electrically connects one corresponding second lead line. A distance between each first pad and the adjacent second pad along a horizontal direction is 10 um&#x2dc;20 um.

Growing community of inventors

Taipei, Taiwan

Chih-Chun Chen