Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Chuan Su

Dian-Hau Chen

Liang-Wei Wang

Yu-Jen Wang

Chen-Chiu Huang

Hung-Chao Kao

Chih-Pin Chiu

Tzu-Ting Liu

A semiconductor memory structure includes bottom electrodes formed over a substrate. The structure also includes first magnetic tunneling junction (MTJ) elements formed over the bottom electrodes in a first region and a second region of the substrate. The structure also includes second MTJ elements formed over the first MTJ elements in the first region and the second region. The structure also includes top electrodes formed over the second MTJ elements. The first MTJ elements in the first region are narrower than the second MTJ elements in the first region, and the second MTJ elements in the second region are narrower than the first MTJ elements in the second region.

Semiconductor memory structure and method for forming the semiconductor memory structure

A method for forming a semiconductor memory structure includes forming an MTJ stack over a substrate. The method also includes etching the MTJ stack to form an MTJ device. The method also includes depositing a metal layer over a top surface and sidewalls of the MTJ device. The method also includes oxidizing the metal layer to form an oxidized metal layer. The method also includes depositing a cap layer over the oxidized metal layer. The method also includes oxidizing the cap layer to form an oxidized cap layer. The method also includes removing an un-oxidized portion of the cap layer.

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Hsinchu, Taiwan

Chih-Chuan Su