Taiwan Semiconductor Manufacturing Comp. Ltd.

TSMC Solar Ltd.

Chih-Ching Lin

Chen-Hua Douglas Yu

Shang-Yun Hou

Chi-Hsi Wu

Hsien-Pin Hu

Wen-Hsin Wei

Shih-Wen Huang

Chun Hua Chang

Tsung-Yang Hsieh

Chun-Che Chen

Jhih-Ming Lin

Wen-Jung Chuang

Chung Chang Liu

Yong-Ping Chan

Cheng-Tao Lee

Chih-Min Wen

Cheng-Shien Chen

Li-Der Chen

Jiin C Tai

Jane-Hong Huang

Ying-Kuang Peng

Jin-Chys Tai

Kai-Yu Tung

An interposer substrate is manufactured with a scribe line between adjacent regions. In an embodiment a separate exposure reticle is utilized to pattern the scribe line. The exposure reticle to pattern the scribe line will create an exposure region which overlaps and overhangs the exposure regions utilized to form adjacent regions.

Semiconductor device and method of manufacture

A method for manufacturing a thin film solar cell device includes forming a back contact layer on a substrate, forming an CIGS absorber layer on the back contact layer, treating the CIGS absorber layer with a metal-based alkaline solution, and forming a buffer layer on the CIGS absorber layer where the treatment of the CIGS absorber layer improves the adhesion between the CIGS absorber layer and the buffer layer and also improves the quality of the p-n junction at the CIGS absorber layer/buffer layer interface.

Metal-based solution treatment of CIGS absorber layer in thin-film solar cells

This invention relates to a method of fabricating metal wiring, whereby sputtered metal is rapidly cooled down by a post-metal quenching process, to prevent deleterious CuAl precipitation. The main embodiments are the formation of a TiN reactively sputtered bottom barrier layer, followed by a sputtered Al&mdash;Cu alloy wiring layer immediately followed by an in situ post-metal quench (key step), then followed by a reactively sputtered second TiN top barrier layer. The &ldquo;in situ&rdquo; post-metal quench is especially effective by employing wafer backside cooling using low temperature helium gas or argon gas, cooling the substrate from a high temperature range of 450 to 150 &deg;C., to a low temperature range near room temperature, in a short time interval of between 30 to 180 seconds. The CuAl precipitates if allowed to form, block the etch removal of the underlying TiN layer causing electrical shorts between closely spaced lines.

Al-Cu alloy sputtering method with post-metal quench

A wafer container having an enclosure member and a body member. The body member having a base, a plurality of spaced arcuate members on the base adapted to encircle wafers stacked on the base. A layer of resilient material on the insides of the arcuate members. A retainer member with flaps positioned between the arcuate members on the top of a stack of wafers.

Storage container for integrated circuit semiconductor wafers

The container has an enclosure member and a body member which together enclose a volume to accept wafers for storage, for handling, or for transportation. The body member has a base, and a plurality of spaced upright arcuate members supported on the base that are adapted to encircle wafers stacked on the base. An enclosure member has a circular top wall and a cylindrically shaped wall that is adapted to encompass and enclose the arcuate members. The retainer element has a flat central portion, and a plurality of flexible outwardly extending flaps depending from the central portion. The retainer element fits within the arcuate members of the body member with the end portions of the flaps positioned in the slots between the arcuate members.

Integrated circuit wafer and retainer element combination

Growing community of inventors

Hsinchu, Taiwan

Chih-Ching Lin