Marvell International Limited

Marvellworld Trade Ltd.

Chih-Ching Chen

Hyunsuk Shin

Chi Kong Lee

Jungil Park

Fei Sun

Siu-Hung Frederick Au

Xueting Yu

The present disclosure includes systems and techniques relating to controlling memory devices with a generic command descriptor. In some implementations, an apparatus, systems, or methods can include a memory controller including an interface configured to connect with a NAND memory device and circuitry configured to receive a descriptor of a command sequence including multiple segments for managing the NAND memory device. The descriptor can include option information corresponding to each segment of the command sequence. The circuitry can also be configured to generate the command sequence for managing the NAND memory device based, at least in part, on the option information of the descriptor.

Generic command descriptor for controlling memory devices

The present disclosure includes systems and techniques relating to management of bit line errors based on a stored set of data. In some implementations, a system can include a device including non-volatile solid state memory and a memory controller. The memory controller can be configured to identify, from the solid state memory of the device, one or more bit line errors for the device upon power up of the system, construct a set of data corresponding to the one or more bit line errors for the device, store the set of data, at least in part, in the device, and, upon a subsequent power up of the system, identify the one or more bit line errors for the device from the stored set of data.

Management of bit line errors based on a stored set of data

Apparatus for programming a non-volatile memory, the apparatus having corresponding methods and tangible computer-readable media, comprise: a command memory configured to hold a plurality of command templates, wherein each of the command templates specifies a sequence of pad signals; a state machine configured to i) receive descriptors, wherein each of the descriptors includes a pointer to a respective one of the command templates in the command memory, and ii) generate the sequence of pad signals based on the command template indicated by the respective pointer; and a non-volatile memory interface configured to provide, to pads of the non-volatile memory, the sequence of pad signals generated by the state machine.

NAND flash controller with programmable command templates

In accordance with an embodiment of the disclosure, systems and methods are provided for reducing an amount of peak power consumption in a device. In certain implementations, a first signal and a second signal are received, wherein the first signal and the second signal are indicative of amounts of power consumption in a device. The first signal is combined with the second signal to generate a combined signal, and at least a portion of the second signal is shifted in time to cause a combination of the first signal and the shifted portion to have a peak amplitude less than a peak amplitude of the combined signal.

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Milpitas, CA, United States of America

Chih-Ching Chen