Au Optronics Corporation

Lighthouse Technology Co., Ltd

Chih-Chin Chang

Teng-Huei Huang

Hsiang-Cheng Hsieh

Chien-Lung Lee

Mao-Yi Chang

Chien-Shen Wung

Yi-Chang Tsao

Kuang-Chao Yeh

Wen-Jeng Hwang

Hsin-Hua Ho

Chih-Hung Wu

Ying-Diean Hwang

A wavelength converting material including a wavelength converting activator and a scatter is provided. The wavelength converting activator is suitable for being activated by a light with a wavelength &#x3bb;, so as to emit a light with a wavelength &#x3bb;. The scatter is disposed on the wavelength converting activator. The scatter is suitable for scattering a first light and a second light irradiated to a surface thereof. As a result of that the scatters on the wavelength converting activators increases the gap of two wavelength converting activators adjacent to each other, the wavelength converting activators could be sufficiently activated for emitting a light with wavelength &#x3bb;while the wavelength converting materials are irradiated by the light with &#x3bb;. Therefore, the brightness of a light emitting diode with the wavelength converting material is enhanced.

Light emitting diode and wavelength converting material

An LED package structure including a carrier, an LED chip, an encapsulant and a PL material is provided, wherein the LED chip is disposed on the carrier for emitting light. The encapsulant encapsulates the LED chip. The PL material is distributed in the encapsulant. The PL material is suitable for being excited by the light emitted from the LED chip and scattering the light. Moreover, the present invention provides a novel PL material with a molecular formula of WMo(Y,Ce,Tb,Gd,Sc)(Al,Ga,Tl,In,B)(O,S,Se): Ce, Tb, wherein 0&#x3c;t&#x3c;5 and 0&#x3c;m, n, u, v&#x3c;15.

Light-emitting diode package structure, cold cathode flourescent lamp and photoluminescent material thereof

A method of manufacturing a low temperature polysilicon film is provided. A first metal layer is formed on a substrate; and openings have been formed in the first metal layer. A second metal layer is formed on the first metal layer: and a hole corresponding to each of the openings is formed in the second metal layer. A silicon layer is formed on the second metal layer; a silicon seed is formed on the substrate inside each of the holes. After removing the first and the second metal layers, an amorphous silicon layer is formed on the substrate by using the silicon seed. Then a laser crystallization step is performed to form a polysilicon layer from the amorphous layer. Since the position of the silicon seed can be controlled, the size and distribution of the silicon grain and the number of the silicon crystal interface can also be controlled.

Method of manufacturing a low temperature polysilicon film

Disclosed herein is a light module comprising a substrate, at least one light-emitting element on the substrate, a sealing cap on the substrate and covering the light-emitting elements, and a fluid in the space formed among the sealing cap, the light-emitting elements, and the substrate, such that heat dissipation is fast and yellowing of the encapsulating material is retarded.

Light module

A light module comprises a light unit, a heat transferring plate or a plurality of heat transferring pipes, and a plurality of heat dissipating fins. The heat transferring plate or heat transferring pipes are positioned on the bottom surface of the light unit to transfer heat generated by the light unit. When the heat transferring plate is used, the heat dissipating fins are arranged under the heat transferring plate and perpendicular to the bottom surface of the heat transferring plate. The heat dissipating fins have a recess for the accommodation of the heat transferring plate and the light unit. When the heat transferring pipes are used, the heat dissipating fins each contact the heat transferring pipes. Uniform heat dissipation is thus attained.

Light module with combined heat transferring plate and heat transferring pipes

An LED module and method of packing the same are provided. The LED module includes a substrate with at least one cavity therein, at least one LED unit positioned on portions of the substrate in the cavity, a circuit positioned above the LED unit and electrically connected to the LED unit, and a first capsulation material filling within the cavity.

LED module and method of packaging the same

A capacitor structure includes a first conductive layer, a first insulating layer disposed on a substrate in sequence, a second conductive layer disposed on portions of the first insulating layer, a second insulating layer disposed on the second conductive layer and the first insulating layer, a third conductive layer disposed on portions of the second insulating layer, a third insulating layer disposed on the third conductive layer and the second insulating layer, and a fourth conductive layer disposed on the third insulating layer. The third conductive layer and the fourth conductive layer are electrically connected to the first conductive layer and the second conductive layer through at least one first contact hole adjacent to the second conductive layer and at least one second contact hole, respectively.

Stacked capacitor having parallel interdigitized structure for use in thin film transistor liquid crystal display

A method for forming a self-aligned low temperature polysilicon thin film transistor (LTPS TFT). First, active layers of a N type LTPS TFT (NLTPS TFT) and a P type LTPS TFT (PLTPS TFT) are formed on a substrate, and a gate insulating (GI) layer is formed on the substrate. Then, a source electrode, a drain electrode, and lightly doped drains (LDD) of the NLTPS TFT are formed. Further, gate electrodes of the NLTPS TFT and the PLTPS TFT are formed on the gate insulating layer. Finally, the gate electrode of the PLTPS TFT is utilized to form a source electrode and a drain electrode in the active layer of the PLTPS TFT.

Method for fomring a self-aligned LTPS TFT

A light-emitting diode (LED) mainly includes a surface mounted package. The surface mounted package includes a substrate, two composite metal layers positioned on the substrate and being insulated from each other, an LED chip electrically connected to the composite metal layers, and a sealing member covering the LED chip. Each of the composite metal layers has a silver layer for preventing solder paste from penetrating into space between the sealing member and the composite metal layers and for reflecting light beams generated by the LED chip.

Light-emitting diode

A light emitting diode package includes a light emitting diode device disposed in the light emitting diode package, and a molding material covering the light emitting diode device. The molding material includes a plurality of scatter supported wavelength converters. Portions of light beams emitted from the light emitting diode device incident to each of the scatter supported wavelength converters are scattered by each of the scatter supported wavelength converters and absorbed to excite each of the scatter supported wavelength converters to emit light in another wavelength.

Light emitting diode package

A method of forming a CMOS thin film transistor device. A dry etching procedure is performed to remove part of a photoresist layer and part of a metal layer and thus forms a gate with a symmetrical cone shape and a remaining photoresist layer. The dielectric layer is thus exposed in the lightly doped area. Specially, the bottom width of the first gate is narrower than that of the first metal layer and the symmetrical cone shape is gradually thinner from bottom to top. Using the gate as a mask, an n-ion implantation is performed to form a self-aligned and symmetrical LDD region in a semiconductor layer without additional photolithography steps.

Method of forming a CMOS thin film transistor device

Method for forming a self-aligned LTPS TFT

A method of forming emitter tips for use in a field emission display. A dielectric layer, an insulating layer, and a conductor layer are formed on a substrate in sequence. An annular groove is formed the conductive layer and the insulating layer. A tip cavity with an insulating tip within is formed by isotropic wet etching. A molybdenum metal layer is formed on the insulating tip. The method of the present invention can substantially reduce the consumption of molybdenum.

Method of forming emitter tips for use in a field emission display

an FED cathode plate with internal via includes an internal via; a second dielectric layer; a second gate line; a metal layer covering the gate line and the internal via; and a contact. The internal via is located on a typical tape line. The second dielectric layer is located on the tape line and abutted against the internal via, thereby connecting to an anode by an adhesive. The second gate line is located on the second dielectric layer and abutted against the internal via. The metal layer is covered over the first gate line, the internal via, and the second gate line; and the contact is located on the tape line and connected adjacent to the second dielectric layer, thereby electrically connecting a lead to outside.

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Hsinchu, Taiwan

Chih-Chin Chang