Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Chien Wang

Chun-Wei Chang

Feng-Jia Shiu

Ching-Sen Kuo

Wang-Pen Mo

Hung-Chang Hsieh

Kai Tzeng

Wei-Chao Chiu

Chun-Chang Chen

Chihy-Yuan Cheng

Cheng-Ta Wu

Sz-Fan Chen

Wei-Lin Chang

Hong-Da Lin

Dun-Nian Yaung

Jen-Cheng Liu

Chien-Hung Lin

Shih Pei Chou

U-Ting Chen

Chia-Chieh Lin

Wei-Tung Huang

Yu-Hao Shih

Chien-hung Lin

Chuan-Ling Wu

Chu-Wei Chang

Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.

Method for reducing charging of semiconductor wafers

A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

Method of using a surfactant-containing shrinkage material to prevent photoresist pattern collapse caused by capillary forces

Implementations of the disclosure provide a method of fabricating an image sensor device. The method includes forming first trenches in a first photoresist layer using a first photomask having a first pattern to expose a first surface of a substrate, directing ions into the exposed first substrate through the first trenches to form first isolation regions in the substrate, removing the first photoresist layer, forming second trenches in a second photoresist layer using a second photomask having a second pattern to expose a second surface of the substrate, the second pattern being shifted diagonally from the first pattern by half mask pitch, directing ions into the exposed second surface through the second trenches to form second isolation regions in the substrate, the first and second isolation regions being alternatingly disposed in the substrate, and the first and second isolation regions defining pixel regions therebetween, and removing the second photoresist layer.

Method of high-aspect ratio pattern formation with submicron pixel pitch

Various examples of a technique for forming a pattern for substrate fabrication are disclosed herein. In an example, a method includes receiving a substrate. A patterned resist is formed on the substrate and has a trench defined therein. A dielectric is deposited on the patterned resist and within the trench such that the dielectric narrows a width of the trench to further define the trench. A fabrication process is performed on a region of the substrate underlying the trench defined by the dielectric.

Patterning for substrate fabrication

A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.

Method of forming a photoresist layer

A method includes forming a first photo resist layer over a base structure and a target feature over the base structure, performing an un-patterned exposure on the first photo resist layer, and developing the first photo resist layer. After the step of developing, a corner portion of the first photo resist layer remains at a corner between a top surface of the base structure and an edge of the target feature. A second photo resist layer is formed over the target feature, the base structure, and the corner portion of the first photo resist layer. The second photo resist layer is exposed using a patterned lithography mask. The second photo resist layer is patterned to form a patterned photo resist.

Lithography process on high topology features

Among other things, one or more techniques and systems for performing a spin coating process associated with a wafer and for controlling thickness of a photoresist during the spin coating process are provided. In particular, a thickening phase is performed during the spin coating process in order to increase a thickness of the photoresist. For example, air temperature of down flow air, flow speed of the down flow air, and heat temperature of heat supplied towards the wafer are increased during the thickening phase. The increase in down flow air and heat increase a vaporization factor of the photoresist, which results in an increase in viscosity and thickness of the photoresist. In this way, the wafer can be rotated at relatively lower speeds, while still attaining a desired thickness. Lowering rotational speed of wafers allows for relatively larger wafers to be stably rotated.

Thickening phase for spin coating process

A method for manufacturing the image sensor device is provided. The method includes depositing a first dielectric layer over a back surface of a substrate, forming a ridge over the first dielectric layer, depositing a second dielectric layer over the first dielectric layer, including filling in a space between two adjacent ridges. The method also includes removing the ridge to form a trench in the second dielectric layer and forming a metal grid in the trench.

Method of fabricating a metal grid for semiconductor device

A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D. The depth Dis larger than the depth D.

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Changhua, Taiwan

Chih-Chien Wang