International Business Machines Corporation

Chih-Chien Liu

John Anthony Fitzsimmons

Jeffrey Curtis Hedrick

Shahab Siddiqui

Darryl D Restaino

Christy Sensenich Tyberg

Delores A Bennett

John Fritche

A method for removing a dielectric layer formed upon a semiconductor substrate is disclosed. In an exemplary embodiment of the invention, the method includes subjecting the dielectric layer to a dry etch process and subjecting an adhesion promoter layer underneath the dielectric layer to a wet etch process.

Method for reworking low-k polymers used in semiconductor structures

A method for forming a planarized dielectric layer upon a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes applying an adhesion promoter to the wafer, thereby forming an adhesion promoter layer. A dielectric material is applied in a spin-on fashion upon the adhesion promoter layer at a relative humidity of less than 40% and for a thickness setting duration of less than 30 seconds. Then, the dielectric material is dried by baking without additional spinning of the semiconductor wafer.

Film planarization for low-k polymers used in semiconductor structures

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Fishkill, NY, United States of America

Chih-Chien Liu