United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Compal Electronics, Inc.

Infineon Technologies Ag

United Microelectroncis Corp.

Chih-Chien Liu

Chin-Fu Lin

Chun-Yuan Wu

Chin-Cheng Chien

Teng-Chun Tsai

Water Lur

Juan-Yuan Wu

Jei-Ming Chen

Cheng-Yuan Tsai

Yi-Wei Chen

Shih-Wei Sun

Ming-Sheng Yang

Tsun-Min Cheng

Pin-Hong Chen

Chia-Lung Chang

Chia-Lin Hsu

Chih-Chieh Tsai

Chun-Chieh Chiu

Tzu-Chieh Chen

Kai-Jiun Chang

Yi-An Huang

Tzu-Chin Wu

Wen-Yi Teng

Ta-Shan Tseng

Yu-Ru Yang

Chao-Ching Hsieh

Hsiao-Pang Chou

Po-Chun Chen

Chia-Chen Wu

Tri-Rung Yew

Wen-Yi Hsieh

Hung-Lin Shih

Gwo-Shii Yang

Tzu-Hao Liu

Wen-Bin Shieh

Yimin Huang

Kun-Chih Wang

Jui-Min Lee

Jen-Chieh Lin

J Y Wu

Hsin-Kuo Hsu

Ji-Min Lin

Chin-Hsiang Lin

Hsueh-Chung Chen

Chien-Ting Lin

Chun-Hsien Lin

Shih-Hung Tsai

Kun-Ju Li

Yu-Shu Lin

Min-Chuan Tsai

Ching-Ling Lin

Po-Cheng Huang

Yi-Chang Chen

Yu-Ting Li

Shao-Wei Wang

Chih-Hsun Lin

Chun-Sheng Chen

Chiung-Sheng Hsiung

Mon-Sen Lin

Yuh-Min Lin

Chih-Chao Yang

Hans-Joachim Barth

Bin-Siang Tsai

Chen-Yi Weng

Jing-Yin Jhang

Tong-Yu Chen

Coming Chen

Neng-Hui Yang

Hui-Shen Shih

Wei-Lun Hsu

Jui-Tsen Huang

Yu-Ying Lin

Hsueh-Hao Shih

Li-Chun Lee

Fu-Shou Tsai

Mei-Ling Chen

Sheng-Hung Lee

Yi-Chun Lin

Wen-Chin Lin

Jui-Hung Lai

Ted Ming-Lang Guo

Rung-Yuan Lee

Anseime Chen

Jen Hui Chen

Sung-Hsiung Wang

Wu-Sian Sie

Ya-Jyuan Hung

Wei-Jen Wu

Chang-Hung Kung

Tsuoe-Hsiang Liao

Kuan-Hsien Li

Jih-Houng Lee

Yu-Fang Chien

Yi-Fang Cheng

Wen-Feng Tsai

Ya-Hui Tseng

Jia-Feng Fang

Yen-Kang Chen

Hsiang-Hung Peng

Tsang-Jung Lin

A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.

Semiconductor device and method for fabricating the same

A portable electronic device including a first body, a second body, a hinge mechanism, a control unit, a sensor unit, a sterilization module, and a shielding module, is provided. The first body has a first inner surface. The second body has a second inner surface. The hinge mechanism is connected between the first body and the second body. The control unit is disposed in the first body or the second body. The sensor unit is disposed in the first body or the second body and coupled to the control unit. The sterilization module is disposed at the hinge mechanism and coupled to the control unit, the sterilization module is configured to generate light for sterilization and disinfection. The shielding module is disposed on the hinge mechanism and the shielding module can move relative to the hinge mechanism.

Portable electronic device and disinfecting and sterilizing method thereof

A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and the silicon layer, a titanium silicon nitride (TiSiN) layer on the TiN layer, and a conductive layer on the TiSiN layer.

A communication apparatus, an electronic apparatus and an antenna adjustment method thereof are provided. The communication apparatus includes an antenna system, a tuning portion and a switch circuit. The antenna system includes at least two antenna units. The tuning portion is disposed between the at least two antenna units and includes at least two branch units. The switch circuit is coupled to the tuning portion. The switch circuit switches a conduction from a first one of the branch units to a second one of the branch units according to a switching signal. The switching signal is related to performances of the antenna system. Accordingly, a dynamic and flexible adjustment mechanism can be provided to increase throughput and improve users' internet experience.

Communication apparatus, electronic apparatus and antenna adjustment method

A fabricating method of a stop layer includes providing a substrate. The substrate is divided into a memory region and a peripheral circuit region. Two conductive lines are disposed within the peripheral circuit region. Then, an atomic layer deposition is performed to form a silicon nitride layer to cover the conductive lines. Later, after forming the silicon nitride layer, a silicon carbon nitride layer is formed to cover the silicon nitride layer. The silicon carbon nitride layer serves as a stop layer.

Method of forming a stop layer filling in a space between spacers

A method for fabricating semiconductor device includes the steps of: forming a bit line structure on a substrate; forming a first spacer, a second spacer, and a third spacer around the bit line structure; forming an interlayer dielectric (ILD) layer on the bit line structure; planarizing part of the ILD layer; removing the ILD layer and the second spacer to form a recess between the first spacer and the third spacer; and forming a liner in the recess.

Semiconductor device including bit line structure of dynamic random access memory (DRAM) and method for fabricating the same

A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.

A magnetic tunnel junction (MTJ) structure of a magnetic random access memory (MRAM) cell includes an insulation layer, a patterned MTJ film stack, an aluminum oxide protection layer, an interlayer dielectric, and a connection structure. The patterned MTJ film stack is disposed on the insulation layer. The aluminum oxide protection layer is disposed on a sidewall of the patterned MTJ film stack, and the aluminum oxide protection layer includes an aluminum film oxidized by an oxidation treatment. The interlayer dielectric covers the aluminum oxide protection layer and the patterned MTJ film stack. The connection structure penetrates the interlayer dielectric above the patterned MTJ film stack, and the connection structure is electrically connected to a topmost portion of the patterned MTJ film stack.

Magnetic tunnel junction structure of magnetic random access memory cell

The present invention provides a bit line gate structure comprising a substrate, an amorphous silicon layer disposed on the substrate, a first doped region located in the amorphous silicon layer, a titanium silicon nitride (TiSiN) layer, located in the amorphous silicon layer, and a second doped region located in the TiSiN layer, the first doped region contacts the second doped region directly.

Bit line gate and manufacturing method thereof

A semiconductor device includes a substrate, a dielectric layer, a first tungsten layer, an interface layer and a second tungsten layer. The dielectric layer is disposed on the substrate and has a first opening and a second opening larger than the first opening. The first tungsten layer is filled in the first opening and is disposed in the second opening. The second tungsten layer is disposed on the first tungsten layer in the second opening, wherein the second tungsten layer has a grain size gradually increased from a bottom surface to a top surface. The interface layer is disposed between the first tungsten layer and the second tungsten layer, wherein the interface layer comprises a nitrogen containing layer. The present invention further includes a method of forming a semiconductor device.

Semiconductor device and method of forming the same

Semiconductor structure with a conductive line and fabricating method of a stop layer

An epitaxial process applying light illumination includes the following steps. A substrate is provided. A dry etching process and a wet etching process are performed to form a recess in the substrate, wherein an infrared light illuminates while the wet etching process is performed. An epitaxial structure is formed in the recess.

Epitaxial process applying light illumination

A method for fabricating semiconductor device includes the steps of: forming a silicon layer on a substrate; forming a metal silicon nitride layer on the silicon layer; forming a stress layer on the metal silicon nitride layer; performing a thermal treatment process; removing the stress layer; forming a conductive layer on the metal silicon nitride layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.

Method for fabricating semiconductor device

A method of manufacturing memory devices is provided in the present invention. The method includes the steps of providing a substrate with multiple capacitors, wherein the capacitor includes a lower electrode layer, an insulating layer and an upper electrode layer and a top plate, forming a tungsten layer on the upper electrode, performing a nitriding plasma treatment to the tungsten layer to form a tungsten nitride layer, and forming a pre-metal dielectric layer on the tungsten nitride layer.

Memory devices and method of manufacturing the same

Growing community of inventors

Taipei, Taiwan

Chih-Chien Liu