Hannstar Display Corporation

Chih-Chieh Lan

Hung-Yi Hung

Chian-Chih Hsiao

Yu-Fang Wang

A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.

Image TFT array of a direct X-ray image sensor and method of fabricating the same

A method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate is provided. The dual-layer photoresist includes a layer of black resin and a layer of transparent photoresist. The black resin, having an optical density greater than three, is mainly used to achieve the effect of black matrix. The transparent photoresist is mainly used to satisfy the needed cell gap between two transparent substrates.

Method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate

In the image TFT array structure, at least one first line, a lower electrode, a pad electrode, a common electrode and a first electrode connected with the first line are defined simultaneously by etching a first conductive layer. At least one second line intersecting the first line, an upper electrode corresponding to the lower electrode, a second electrode connected with the second line and a third electrode connected with the upper electrode are defined simultaneously by etching a second conductive layer applied to cover the substrate and above the first conductive layer. The lower electrode and the upper electrode of the storage capacitor have an approximately same large area.

Structure for an image TFT array for an indirect X-ray sensor

The present invention discloses a method of manufacturing an image TFT array and a structure thereof. A substrate is provided. At least one first line, a lower electrode, a pad electrode, a common electrode and a first electrode connected with the first line are defined simultaneously by etching a first conductive layer. At least one second line intersecting the first line, an upper electrode corresponding to the lower electrode, a second electrode connected with the second line and a third electrode connected with the upper electrode are defined simultaneously by etching a second conductive layer applied to cover the substrate and above the first conductive layer.

Method of manufacturing an image TFT array for an indirect X-ray sensor and structure thereof

On a substrate, the pattern of the first conductive layer is defined, that is, a gate line combination including gate pads, scanning lines and gate electrodes. A gate insulating layer, a semiconductor layer, a doped semiconductor layer and a second conductive layer are deposited on the substrate and the above-mentioned gate line combination in sequence. A photoresist layer is overlaid on the second conductive layer. The photoresist layer within the aperture areas is fully exposed. Using a half-tone mask or a slit pattern to make parts of the photoresist layer lying on the gate pads and the gate electrodes are not exposed to its full depth. As a result, the photoresist pattern formed varies in thickness. After being processed with drying etching and wet etching for several times, all the layers previously deposited within the aperture areas can be totally etched and removed. However, as regards the layers deposited on the gate pads and the gate electrodes, etching only takes place in those layers above the semiconductor layer. Then, an organic protection layer is laid on the substrate and the above-mentioned structure, and the holes, which are to function as the passageways for the transparent conductive layer to contact the metallic layer, are defined on the organic protection layer. Then, the gate pads are exposed out of holes above them, using dry etching again. Lastly, the pattern of the transparent conductive layer is defined on the organic protection layer and in the plurality of holes.

Method of manufacturing liquid crystal display

A method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate is provided. The dual-layer photoresist is composed of a layer of black resin and a layer of transparent photoresist. The black resin, of which optical density is greater than three, is mainly used to achieve the effect of black matrix. The transparent photoresist is mainly used to satisfy the needed cell gap between two transparent substrates.

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Taipei, Taiwan

Chih-Chieh Lan