Innodisk Corporation

Chih-Chieh Kao

Yueh-Feng Tsai

A high capacitance memory device comprises a printed circuit board provided with a plurality of metal connection pads and at least one capacitor core is arranged on the printed circuit board. The capacitor core has connection pins and is electrically connected to the metal connection pads through a conductive glue. An adhesive layer covers the capacitor core. A memory module is set on the printed circuit board and electrically connected to the capacitor core.

High capacitance memory device

The invention provides a data storage system having dual channels, which comprises a host. The host comprises a host-side control unit, a first data storage device, and at least one second data storage device. The first data storage device comprises a first data-side controller. The host-side control unit is connected to the first data storage device via a high-speed channel, and accesses data of the first data storage device via the high-speed channel. The first data storage device is connected to each of the second data storage devices via a low-speed channel, respectively. The low-speed channel is a bus of broadcast type. The first data-side controller of the first data storage device manages data exchanging, data copying, and data moving between the first data storage device and the second data storage device via the low-speed channel.

Data storage system capable of using high speed channel to access data, and using low speed channel to manage data exchanging, copying, and moving

A data storage device having self-destruction function is disclosed. The data storage device is inserted into a host and includes a controller, a plurality of flash memories, a trigger, and a backup power module. When the data storage device is pulled out of the host, the trigger is triggered and transmits a physical-destruction activating signal to the backup power module, and the backup power module outputs a high voltage to the flash memories according to the physical-destruction activating signal so that the flash memories can be destroyed by the high voltage.

Data storage device having self-destruction function

The invention provides a write protection circuit, which is applied to a data storage device. The data storage device comprises a controller and a plurality of flash memories. The flash memories comprise a write protection pin. The write protection circuit comprises a fuse and a switch. When the switch is operated in a turned on state, the fuse is directly grounded via the switch and therefore is burned, and a signal on the write protection pin of the flash memories becomes a signal with a low-level state so that the flash memories of the data storage device will be permanently inhibited to be written.

Write protection circuit

The invention provides a detection system and detection circuit for detecting health status of backup power supply module. The detection circuit comprises a boost converter, a controller, and at least one backup power supply module. The boost converter receives an input voltage to generate a first high voltage. When the detection circuit is operated in a detection state, the boost converter is inhibited to output the first high voltage, the backup power supply module can execute a discharging process to provide a discharged energy to a load device, the controller detects a time at which a discharged potential of the backup power supply module is dropped from a first voltage to a second voltage to obtain a discharged time detection value. The controller can know a health status of the backup power supply module by a comparison between the discharged time detection value and a discharged time threshold value.

Detecting system and detection circuit for detecting health status of backup power supply module

The invention provides a flash memory device, which comprises a controller, a plurality of flash memories, a switcher, a power supply module, and a voltage detection circuit. When the system voltage is higher than a voltage threshold, the voltage detection circuit outputs an enable signal to the switcher to turn on the switcher, the system voltage is provided to the power supply module, the power supply module executes a charging process by the system voltage, and generates an output voltage based on the system voltage. The output voltage is an operating voltage of the controller and the flash memories. When the system voltage is lower than the voltage threshold, the voltage detection circuit outputs a disable signal to the switcher to turn off the switcher, the system voltage is inhibited to provide to the power supply module, the power module generates the output voltage by executing a discharging process.

Flash memory device having abnormal power protection

A flash memory device. The flash memory device comprises a controller, a plurality of flash memories, and a voltage control circuit. The voltage control circuit comprises a boost converter, a buck converter, and a voltage controller. The boost converter receives a system voltage to generate a first high voltage. The buck converter receives the first high voltage and provides an output voltage to the controller and the flash memories. The voltage controller detects the output voltage generated by the buck converter, and therefore generates a feedback signal. When the voltage controller receives a physical destruction control signal from a host computer, the buck converter will generate an output signal with high level according to the control of the feedback signal. Afterwards, semiconductor physical elements of the controller and the flash memories will be burned by the output signal with high level.

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Taipei, Taiwan

Chih-Chieh Kao