Industrial Technology Research Institute

Nanodynamics, Inc.

Chih-Chieh Hsu

Jing-Yi Yan

Chen-Wei Lin

Ming-Hsun Yang

Guey-Chyuan Chen

Shu-Tang Yeh

Chen-Hua Lin

Hsiao-Chiang Yao

Chu-Yin Hung

Wen-Chung Lu

Kuang-Jung Chen

Kung Linliu

Liang-Hsiang Chen

Isaac Wing-Tak Chan

Ping-I Shih

Arnold Chang-mou Yang

A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.

Semiconductor device, capacitor, TFT with improved stability of the active layer and method of manufacturing the same

A sensing apparatus including a first scan line, a second scan line, a readout line, a first sensing device and a second sensing device is provided. The first sensing device is coupled to the first scan line and the readout line, and senses a first energy, and outputs a first readout signal corresponding to the first energy to the readout line in response to a first scan signal on the first scan line. The first sensing device is reset in response to the first scan signal and a reference signal on the readout line. The first sensing device includes a first reset unit configured for resetting the first sensing device, where a first terminal of the first reset unit is coupled to the first scan line, and a control terminal of the first reset unit is coupled to the readout line. A driving method thereof is also provided.

Sensing apparatus and driving method thereof

A semiconductor device structure is provided. The semiconductor device structure may include a substrate, a semiconductor layer, a first conductive layer, a second conductive layer, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The semiconductor layer is adjacent to the first dielectric layer or the second dielectric layer. The semiconductor layer is disposed on the first dielectric layer or the second dielectric layer. The first conductive layer is adjacent to the first dielectric layer or the second dielectric layer. The second conductive layer is disposed on the first dielectric layer or the second dielectric layer. The effective Young's modulus of the second dielectric layer may be smaller than the Young's modulus of the first dielectric layer.

Semiconductor device structure, method for manufacturing the same and pixel structure using the same

Semiconductor device, TFT, capacitor and method of manufacturing the same

A double-side light emitting display panel includes a substrate, a plurality of top emission pixel structures and a plurality of bottom emission pixel structures. The top emission pixel structures are disposed on the substrate, and the bottom emission pixel structures are disposed on the substrate. The top emission pixel structures and the bottom emission pixel structures are arranged alternatively on the substrate.

Double-side light emitting display panel

A light emitting device includes a substrate, and a plurality of light emitting structures disposed thereon. Each of the light emitting structures includes an auxiliary electrode disposed on the substrate, a first insulating layer disposed on the substrate and covering the auxiliary electrode, an electrode disposed on the first insulating layer, a second insulating layer disposed on the first insulating layer and having a first opening exposing the electrode, an organic light emitting layer disposed in the first opening, a cathode disposed on the organic light emitting layer, at least a conductive structure penetrating through the first insulating layer and the second insulating layer, and a closed ring structure disposed on the second insulating layer and around the cathode, wherein a thickness of the closed ring structure is larger than that of the cathode.

Light emitting device

A method of manufacturing a piezoelectric ink-jet print-head uses a metallic layer and a thick film layer with a slot hole therein instead of a ceramic vibration plate and an ink layer. The piezoelectric layer and the upper electrode layer are formed inside the ink cavity so that overall thickness of the print head is reduced. To form the ink-jet print head, a metallic layer and a lower electrode layer are sequentially formed over a substrate. A patterned piezoelectric layer and an upper electrode layer are sequentially formed over the lower electrode layer. A patterned thick film layer with a slot hole therein is formed over the metallic layer. The thick film layer and the metallic layer together form a cavity that encloses the piezoelectric layer and the upper electrode layer. A nozzle plate having a nozzle thereon is attached to the thick film layer. The nozzle plate, the thick film layer and the metallic layer together form an ink cavity. The hole in the nozzle is continuous with the ink cavity.

Method of manufacturing a piezoelectric print-head

A method of forming a nozzle plate of an inkjet print head. A silicon chip is provided with an activated device and a first film is formed on the silicon chip, with a first opening corresponding to the activated device. Then, a second film is formed on the first film. Next, a photoresist layer is formed on the second film, such that the photoresist layer has a second opening corresponding to the first opening. Next, the second film under the second opening of the photoresist layer is etched to form a via in the second film passing through the first opening.

Method of using photolithography and etching for forming a nozzle plate of an inkjet print head

A piezoelectric ink-jet printhead that uses a metallic layer and a thick film layer with a slot hole therein instead of a ceramic vibration plate and an ink layer. The piezoelectric layer and the upper electrode layer are formed inside the ink cavity so that overall thickness of the print head is reduced. To form the ink-jet print head, a metallic layer and a lower electrode layer are sequentially formed over a substrate. A patterned piezoelectric layer and an upper electrode layer are sequentially formed over the lower electrode layer. A patterned thick film layer with a slot hole therein is formed over the metallic layer. The thick film layer and the metallic layer together form a cavity that encloses the piezoelectric layer and the upper electrode layer. A nozzle plate having a nozzle thereon is attached to the thick film layer. The nozzle plate, the thick film layer and the metallic layer together form an ink cavity. The hole in the nozzle is continuous with the ink cavity.

Growing community of inventors

Hsinchu, Taiwan

Chih-Chieh Hsu