Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-chieh Chang

Kei-Wei Chen

Chun-Wei Hsu

Liang-Guang Chen

Chi-Jen Liu

Kao-Feng Liao

Ji Cui

Ting-Hsun Chang

Hui-chi Huang

Chia-Jung Hsu

Yi-Sheng Lin

Hsin-Ying Ho

Chun-Hao Kung

Ching-Hsiang Tsai

Peng-Chung Jangjian

Tung-Kai Chen

Fang-I Chih

Jian-Ci Lin

Jeng-Chi Lin

A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one cationic surfactant having at least one nitrogen atom in the molecule. The slurry includes at least one liquid carrier, at least one abrasive and at least one pH adjusting agent, and has a pH of less than 7.0. The polishing method includes using the slurry composition with the cationic surfactant to polish a conductive layer. The integrated circuit comprises a block layer comprising the cationic surfactant between a sidewall of the conductive plug and an interlayer dielectric layer.

Composition and method for polishing and integrated circuit

A planarization method includes: providing a substrate, wherein the substrate includes a first region and a second region having different degrees of hydrophobicity or hydrophilicity, the second region covering an upper surface of the first region; polishing the substrate with a polishing slurry until the upper surface of the first region is exposed; and continuing polishing and performing a surface treatment by the polishing slurry to adjust the degree of hydrophobicity or hydrophilicity of at least one of the first region and the second region. The polishing slurry and the upper surface of the second region have a first contact angle, and the polishing slurry and the upper surface of the first region have a second contact angle. The surface treatment keeps a contact angle difference between the first contact angle and the second contact angle being equal to or less than 30 degrees during the polishing.

Chemical mechanical polishing method

A slurry composition, a semiconductor structure and a method for forming a semiconductor structure are provided. The slurry composition includes a slurry and a precipitant dispensed in the slurry. The semiconductor structure comprises a blocking layer including at least one element of the precipitant. The method includes using the slurry composition with the precipitant to polish a conductive layer and causing the precipitant to flow into the gap.

Slurry composition, semiconductor structure and method for forming the same

Growing community of inventors

HSINCHU COUNTY, Taiwan

Chih-chieh Chang