United Microelectronics Corp.

Institute for Information Industry

Advanced Ion Beam Technology, Inc.

Chih-Chiang Wu

Ti-Bin Chen

Kanchei Loa

YI-Fan Li

Nien-Ting Ho

Shih-Chieh Hsu

Shih-Min Chou

Shu-Tsz Liu

Zhen Wu

Wen-Yen Huang

Shyh-Fann Ting

Yi-Ting Lin

Tsung-Yu Tsai

Tsai-Yu Wen

Ching-I Li

Kwang-Cheng Chen

Shi-You Liu

Shao-Yu Lien

Huan-Chi Ma

Chien-Wen Yu

Shao-Ping Chen

Ya-Yin Hsiao

Yung-Lan Tseng

Yu-Chun Liu

Cheng-Tung Huang

Meng-Yi Wu

Tzyy-Ming Cheng

Wen-Han Hung

Kun-Hsien Lee

Hsuan-Hsu Chen

Li-Shian Jeng

Po-Lun Cheng

Yu-Ho Ni

Chun-Chin Kang

Chu-Yin Tseng

Chien-Ta Feng

Chia-Hung Wei

Shih-Fang Tzou

Hai-Han Wang

Chun-Che Chien

Chia-Wen Liang

Chiu-Wen Chen

Tzu-Chin Wu

Chun-Yen Hsu

Min-Hua Tsai

Po-Ching Su

Kenchei Loa

Chung-Min Shih

Jen-Hong Huang

Yu-Fu Wang

A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.

Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.

A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure.

P-type field effect transistor and method for fabricating the same

A semiconductor device includes a substrate having a first region and a second region and a gate structure on the first region and the second region of the substrate. The gate structure includes a first bottom barrier metal (BBM) layer on the first region and the second region, a first work function metal (WFM) layer on the first region; and a diffusion barrier layer on a top surface and a sidewall of the first WFM layer on the first region and the first BBM layer on the second region. Preferably, a thickness of the first BBM layer on the second region is less than a thickness of the first BBM layer on the first region.

A p-type field effect transistor (pFET) includes a gate structure on a substrate, a channel region in the substrate directly under the gate structure, and a source/drain region adjacent to two sides of the gate structure. Preferably, the channel region includes a top portion and a bottom portion, in which a concentration of germanium in the bottom portion is lower than a concentration of germanium in the top portion and a depth of the top portion is equal to a depth of the bottom portion.

P-type field effect transistor having channel region with top portion and bottom portion

Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. The sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

Wafer charges monitoring

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first bottom barrier metal (BBM) layer on the first region and the second region; forming a first work function metal layer on the first BBM layer on the first region and the second region; removing the first work function metal (WFM) layer and part of the first BBM layer on the second region; and forming a diffusion barrier layer on the first WFM layer on the first region and the first BBM layer on the second region.

Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. As usual, the sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

A method for wireless communication includes the following steps. A silence command is transmitted to a mobile terminal by a network node when a first predetermined condition occurs. A secondary component carrier of the mobile terminal transitions to a silence state from an activation state according to the silence command and a silence-specific configuration, and is operated in the silence state according to the silence-specific configuration. A signaling message is transmitted to the mobile terminal by the network node when a second predetermined condition occurs. The secondary component carrier transitions to the activation state from the silence state according to the silence-specific configuration and restarts or resumes signal transmissions on the secondary cell in accordance with the signaling message.

Method and apparatus for wireless communications

A base station in a spectrum sharing system includes a sensor configured to sense signals over a shared spectrum, a transceiver configured to receive at least one measurement report transmitted from at least one user terminal regarding signals over the shared spectrum sensed by the at least one user terminal and a processor configured to determine whether to utilize the shared spectrum according to the signals over the shared spectrum sensed by the sensor or acquired from the at least one measurement report. A user terminal in a spectrum sharing system includes a sensor configured to sense signals over a shared spectrum, a processor configured to generate a measurement report regarding the signals over the shared spectrum and a transceiver configured to transmit the measurement report to a base station so that the base station determines whether to utilize the shared spectrum according the signals over the shared spectrum.

Base station and user terminal in spectrum sharing system and method for determining usage of shared spectrum

The present invention relates to a resource allocation apparatus, resource allocation method, and non-transitory computer readable medium thereof. The resource allocation apparatus adapted for a network comprising a femto base station (BS) which communicates with the femto BS and includes a storage, a transceiver and a processor connected to the storage and the transceiver. The storage stores a random function, reuse information and fractional frequency reuse (FFR) information which records an original cell ID/frequency corresponding relation of an unoccupied partition of the network. The processor selects a time partition from the unoccupied partition according to the random function and the reuse information, changes the original cell ID/frequency corresponding relation to generate a changed cell ID/frequency corresponding relation according to the FFR information; and generates an allocation message according to the time partition and the changed cell ID/frequency corresponding relation, wherein the transceiver conveys the allocation message to the femto BS.

Resource allocation apparatus, resource allocation method, and non-transitory computer readable medium

The present invention relates to a subscriber station, resource allocation method, and non-transitory computer readable medium thereof. The subscriber station using in a femtocell network comprises a receiving interface and a processor. The receiving interface receives a frame of the femtocell network. The processor, electrically connected to the receiving interface, blindly decodes a first logical frequency resource unit (LRU) of a frequency partition of the frame to obtain an allocation message, determines the allocation message is relative to the subscriber station, and proceeds a data transmission in the femtocell network according to the allocation message.

Macrocell network, resource allocation method, and non-transitory computer readable medium

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Shalu., Taiwan

Chih-Chiang Wu